Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control

Resistive switching effects in transition metal oxide-based devices offer new opportunities for information storage and computing technologies. Although it is known that resistive switching is a defect-driven phenomenon, the precise mechanisms are still poorly understood owing to the difficulty of s...

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Veröffentlicht in:	Scientific reports 2015-06, Vol.5 (1), p.11079-11079, Article 11079
Hauptverfasser:	Mikheev, Evgeny, Hwang, Jinwoo, Kajdos, Adam P., Hauser, Adam J., Stemmer, Susanne
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 639/301/357 Contamination Humanities and Social Sciences Information storage Interfaces Low temperature Molecular beam epitaxy multidisciplinary Point defects Science Temperature effects
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