Direct growth of freestanding GaN on C-face SiC by HVPE

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover,...

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Veröffentlicht in:	Scientific reports 2015-06, Vol.5 (1), p.10748-10748, Article 10748
Hauptverfasser:	Tian, Yuan, Shao, Yongliang, Wu, Yongzhong, Hao, Xiaopeng, Zhang, Lei, Dai, Yuanbin, Huo, Qin
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 639/301/1019/1022 Diffraction Etching Humanities and Social Sciences Luminescence multidisciplinary Optical properties Phosphoric acid Photons Polarity Science X-ray diffraction
Online-Zugang:	Volltext
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