Direct growth of freestanding GaN on C-face SiC by HVPE
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover,...
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description | In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra. |
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fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4451798</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1899558103</sourcerecordid><originalsourceid>FETCH-LOGICAL-c504t-bd39ee5b155a812b0065288044b6597e6f517260128026615e904e90e5988cd3</originalsourceid><addsrcrecordid>eNplkVFLwzAUhYMobsw9-Ack4IsK1SRNsuRFkDo3Yajg8DWkXbp1bMlMWmX_3sjmmBoICdyPc889F4BTjK4xSsVN8GaFUY-KA9AmiLKEpIQc7v1boBvCHMXDiKRYHoMW4SilMpVt0LuvvClqOPXus55BV8LSGxNqbSeVncKBfoLOwiwpdWHga5XBfA2Hby_9E3BU6kUw3e3bAeOH_jgbJqPnwWN2N0oKhmid5JNUGsNyzJgWmOQIcUaEQJTmnMme4SXDvegGE4EI55gZiWi8hkkhiknaAbcb2VWTL82kMLb2eqFWvlpqv1ZOV-p3xVYzNXUfitIoLEUUuNgKePfexMHUsgqFWSy0Na4JCnPBEedcsoie_0HnrvE2TqewkJIxEfOO1OWGKrwLMftyZwYj9b0QtVtIZM_23e_In_gjcLUBQizZqfF7Lf-pfQGvm5Cc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1899558103</pqid></control><display><type>article</type><title>Direct growth of freestanding GaN on C-face SiC by HVPE</title><source>DOAJ Directory of Open Access Journals</source><source>Springer Nature OA Free Journals</source><source>Nature Free</source><source>EZB-FREE-00999 freely available EZB journals</source><source>PubMed Central</source><source>Free Full-Text Journals in Chemistry</source><creator>Tian, Yuan ; Shao, Yongliang ; Wu, Yongzhong ; Hao, Xiaopeng ; Zhang, Lei ; Dai, Yuanbin ; Huo, Qin</creator><creatorcontrib>Tian, Yuan ; Shao, Yongliang ; Wu, Yongzhong ; Hao, Xiaopeng ; Zhang, Lei ; Dai, Yuanbin ; Huo, Qin</creatorcontrib><description>In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep10748</identifier><identifier>PMID: 26034939</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/301/1005/1007 ; 639/301/1019/1022 ; Diffraction ; Etching ; Humanities and Social Sciences ; Luminescence ; multidisciplinary ; Optical properties ; Phosphoric acid ; Photons ; Polarity ; Science ; X-ray diffraction</subject><ispartof>Scientific reports, 2015-06, Vol.5 (1), p.10748-10748, Article 10748</ispartof><rights>The Author(s) 2015</rights><rights>Copyright Nature Publishing Group Jun 2015</rights><rights>Copyright © 2015, Macmillan Publishers Limited 2015 Macmillan Publishers Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c504t-bd39ee5b155a812b0065288044b6597e6f517260128026615e904e90e5988cd3</citedby><cites>FETCH-LOGICAL-c504t-bd39ee5b155a812b0065288044b6597e6f517260128026615e904e90e5988cd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451798/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451798/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,315,729,782,786,866,887,27931,27932,41127,42196,51583,53798,53800</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26034939$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Tian, Yuan</creatorcontrib><creatorcontrib>Shao, Yongliang</creatorcontrib><creatorcontrib>Wu, Yongzhong</creatorcontrib><creatorcontrib>Hao, Xiaopeng</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Dai, Yuanbin</creatorcontrib><creatorcontrib>Huo, Qin</creatorcontrib><title>Direct growth of freestanding GaN on C-face SiC by HVPE</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.</description><subject>639/301/1005/1007</subject><subject>639/301/1019/1022</subject><subject>Diffraction</subject><subject>Etching</subject><subject>Humanities and Social Sciences</subject><subject>Luminescence</subject><subject>multidisciplinary</subject><subject>Optical properties</subject><subject>Phosphoric acid</subject><subject>Photons</subject><subject>Polarity</subject><subject>Science</subject><subject>X-ray diffraction</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNplkVFLwzAUhYMobsw9-Ack4IsK1SRNsuRFkDo3Yajg8DWkXbp1bMlMWmX_3sjmmBoICdyPc889F4BTjK4xSsVN8GaFUY-KA9AmiLKEpIQc7v1boBvCHMXDiKRYHoMW4SilMpVt0LuvvClqOPXus55BV8LSGxNqbSeVncKBfoLOwiwpdWHga5XBfA2Hby_9E3BU6kUw3e3bAeOH_jgbJqPnwWN2N0oKhmid5JNUGsNyzJgWmOQIcUaEQJTmnMme4SXDvegGE4EI55gZiWi8hkkhiknaAbcb2VWTL82kMLb2eqFWvlpqv1ZOV-p3xVYzNXUfitIoLEUUuNgKePfexMHUsgqFWSy0Na4JCnPBEedcsoie_0HnrvE2TqewkJIxEfOO1OWGKrwLMftyZwYj9b0QtVtIZM_23e_In_gjcLUBQizZqfF7Lf-pfQGvm5Cc</recordid><startdate>20150602</startdate><enddate>20150602</enddate><creator>Tian, Yuan</creator><creator>Shao, Yongliang</creator><creator>Wu, Yongzhong</creator><creator>Hao, Xiaopeng</creator><creator>Zhang, Lei</creator><creator>Dai, Yuanbin</creator><creator>Huo, Qin</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20150602</creationdate><title>Direct growth of freestanding GaN on C-face SiC by HVPE</title><author>Tian, Yuan ; Shao, Yongliang ; Wu, Yongzhong ; Hao, Xiaopeng ; Zhang, Lei ; Dai, Yuanbin ; Huo, Qin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c504t-bd39ee5b155a812b0065288044b6597e6f517260128026615e904e90e5988cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>639/301/1005/1007</topic><topic>639/301/1019/1022</topic><topic>Diffraction</topic><topic>Etching</topic><topic>Humanities and Social Sciences</topic><topic>Luminescence</topic><topic>multidisciplinary</topic><topic>Optical properties</topic><topic>Phosphoric acid</topic><topic>Photons</topic><topic>Polarity</topic><topic>Science</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tian, Yuan</creatorcontrib><creatorcontrib>Shao, Yongliang</creatorcontrib><creatorcontrib>Wu, Yongzhong</creatorcontrib><creatorcontrib>Hao, Xiaopeng</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Dai, Yuanbin</creatorcontrib><creatorcontrib>Huo, Qin</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Health & Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Databases</collection><collection>ProQuest Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>ProQuest Biological Science Collection</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>PML(ProQuest Medical Library)</collection><collection>Science Database (ProQuest)</collection><collection>Biological Science Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tian, Yuan</au><au>Shao, Yongliang</au><au>Wu, Yongzhong</au><au>Hao, Xiaopeng</au><au>Zhang, Lei</au><au>Dai, Yuanbin</au><au>Huo, Qin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct growth of freestanding GaN on C-face SiC by HVPE</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2015-06-02</date><risdate>2015</risdate><volume>5</volume><issue>1</issue><spage>10748</spage><epage>10748</epage><pages>10748-10748</pages><artnum>10748</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>26034939</pmid><doi>10.1038/srep10748</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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subjects | 639/301/1005/1007 639/301/1019/1022 Diffraction Etching Humanities and Social Sciences Luminescence multidisciplinary Optical properties Phosphoric acid Photons Polarity Science X-ray diffraction |
title | Direct growth of freestanding GaN on C-face SiC by HVPE |
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