Direct growth of freestanding GaN on C-face SiC by HVPE

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover,...

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Veröffentlicht in:Scientific reports 2015-06, Vol.5 (1), p.10748-10748, Article 10748
Hauptverfasser: Tian, Yuan, Shao, Yongliang, Wu, Yongzhong, Hao, Xiaopeng, Zhang, Lei, Dai, Yuanbin, Huo, Qin
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container_start_page 10748
container_title Scientific reports
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creator Tian, Yuan
Shao, Yongliang
Wu, Yongzhong
Hao, Xiaopeng
Zhang, Lei
Dai, Yuanbin
Huo, Qin
description In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.
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Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. 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subjects 639/301/1005/1007
639/301/1019/1022
Diffraction
Etching
Humanities and Social Sciences
Luminescence
multidisciplinary
Optical properties
Phosphoric acid
Photons
Polarity
Science
X-ray diffraction
title Direct growth of freestanding GaN on C-face SiC by HVPE
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