Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fab...

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Veröffentlicht in:	ACS photonics 2015-01, Vol.2 (1), p.137-143
Hauptverfasser:	Puchtler, Tim J, Woolf, Alexander, Zhu, Tongtong, Gachet, David, Hu, Evelyn L, Oliver, Rachel A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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