Photo-induced optical activity in phase-change memory materials

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge 2 Sb 2 Te 5 and N-doped Ge 2 Sb 2 Te 5 N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by...

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Veröffentlicht in:Scientific reports 2015-03, Vol.5 (1), p.8770-8770, Article 8770
Hauptverfasser: Borisenko, Konstantin B., Shanmugam, Janaki, Williams, Benjamin A. O., Ewart, Paul, Gholipour, Behrad, Hewak, Daniel W., Hussain, Rohanah, Jávorfi, Tamás, Siligardi, Giuliano, Kirkland, Angus I.
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container_title Scientific reports
container_volume 5
creator Borisenko, Konstantin B.
Shanmugam, Janaki
Williams, Benjamin A. O.
Ewart, Paul
Gholipour, Behrad
Hewak, Daniel W.
Hussain, Rohanah
Jávorfi, Tamás
Siligardi, Giuliano
Kirkland, Angus I.
description We demonstrate that optical activity in amorphous isotropic thin films of pure Ge 2 Sb 2 Te 5 and N-doped Ge 2 Sb 2 Te 5 N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.
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subjects 147/135
639/301/1019/385
639/301/119/1002
639/624/1107/527/873
639/638/298/398
Circular dichroism
Humanities and Social Sciences
multidisciplinary
Phase transitions
Science
Thin films
title Photo-induced optical activity in phase-change memory materials
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