Mn as Surfactant for the Self-Assembling of AlxGa1-xN/GaN Layered Heterostructures

The structural analysis of GaN and AlxGa1-xN/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of AlxGa1-xN on GaN. Moreover, the doping with Mn promotes the formation of layered AlxGa1-xN/GaN superlattice-like heterostructures, which opens wide perspectives for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures. The influence of Mn on the growth process of AlxGa1-xN/GaN heterostructures grown by MOVPE is analyzed, which shows a particularly remarkable effect on the incorporation of Al, the morphology of the surface, and the plastic relaxation. Mn also promotes the formation of layered AlxGa1-xN/GaN superlattice-like heterostructures, which opens wide perspective for the self-assembling of functional layered structures.