Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene

The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five differen...

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Veröffentlicht in:Scientific reports 2014-04, Vol.4 (1), p.4630-4630, Article 4630
Hauptverfasser: Nguyen, The An, Lee, Jae-Ung, Yoon, Duhee, Cheong, Hyeonsik
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Lee, Jae-Ung
Yoon, Duhee
Cheong, Hyeonsik
description The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81 eV were used. The position and the line shape of the Raman 2D, G*, N, M and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established.
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subjects 140/133
147/3
639/766/1130/2798
639/766/119/544
Energy
Humanities and Social Sciences
multidisciplinary
Optical properties
Raman spectroscopy
Science
Software utilities
Steel products
title Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene
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