Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox m...

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Veröffentlicht in:	Nanoscale research letters 2014-01, Vol.9 (1), p.52-52, Article 52
Hauptverfasser:	Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering
Online-Zugang:	Volltext
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