Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier

The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanosc...

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Veröffentlicht in:Scientific reports 2014-01, Vol.4 (1), p.3835-3835, Article 3835
Hauptverfasser: Li, Qiang, Shen, Ting-Ting, Cao, Yan-Ling, Zhang, Kun, Yan, Shi-Shen, Tian, Yu-Feng, Kang, Shi-Shou, Zhao, Ming-Wen, Dai, You-Yong, Chen, Yan-Xue, Liu, Guo-Lei, Mei, Liang-Mo, Wang, Xiao-Lin, Grünberg, Peter
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140/146
639/301/1005/1008
639/766/1130/2798
639/766/119/995
Computer memory
Data storage
Humanities and Social Sciences
Migration
multidisciplinary
Science
Temperature effects
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container_title Scientific reports
container_volume 4
creator Li, Qiang
Shen, Ting-Ting
Cao, Yan-Ling
Zhang, Kun
Yan, Shi-Shen
Tian, Yu-Feng
Kang, Shi-Shou
Zhao, Ming-Wen
Dai, You-Yong
Chen, Yan-Xue
Liu, Guo-Lei
Mei, Liang-Mo
Wang, Xiao-Lin
Grünberg, Peter
description The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions. The bipolar resistance switching ratio is high up to 90 and the TMR ratio of the high resistance state gets to 8% at room temperature, which leads to three resistance states. The bipolar resistance switching is explained by the metal-insulator transition of CoO 1−v layer due to the migration of oxygen ions between CoO 1−v and ZnO 1−v .
doi_str_mv 10.1038/srep03835
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However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions. The bipolar resistance switching ratio is high up to 90 and the TMR ratio of the high resistance state gets to 8% at room temperature, which leads to three resistance states. 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subjects 140/146
639/301/1005/1008
639/766/1130/2798
639/766/119/995
Computer memory
Data storage
Humanities and Social Sciences
Migration
multidisciplinary
Science
Temperature effects
title Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier
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