Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in the growth direction. In the low...

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Veröffentlicht in:	Nanoscale research letters 2014-01, Vol.9 (1), p.23-23, Article 23
Hauptverfasser:	Reyes, Daniel F, Bastiman, Faebian, Hunter, Chris J, Sales, David L, Sanchez, Ana M, David, John PR, González, David
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Novel gain materials and devices based on III-V-N/Bi compounds
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