Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates

A combination of high‐resolution X‐ray diffractometry, Rutherford back scattering spectroscopy and secondary‐ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatm...

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Veröffentlicht in:	Journal of applied crystallography 2013-08, Vol.46 (4), p.882-886
Hauptverfasser:	Shcherbachev, Kirill, Privezentsev, Vladimir, Kulikauskas, Vaclav, Zatekin, Vladimir, Saraykin, Vladimir
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic structure Crystal defects Crystal structure Crystallography Damage ion implantation radiation-induced defects Secondary ion mass spectrometry Silicon Substrates Transformations X-ray diffraction X-Ray Diffraction and Imaging Zinc
Online-Zugang:	Volltext
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