Fast, exact and non-destructive diagnoses of contact failures in nano-scale semiconductor device using conductive AFM

We fabricated a novel in-line conductive atomic force microscopy (C-AFM), which can analyze the resistive failures and examine process variance with an exact-positioning capability across the whole wafer scale in in-line DRAM fabrication process. Using this in-line C-AFM, we introduced a new, non-de...

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Veröffentlicht in:	Scientific reports 2013-06, Vol.3 (1), p.2088-2088, Article 2088
Hauptverfasser:	Shin, ChaeHo, Kim, Kyongjun, Kim, JeongHoi, Ko, Wooseok, Yang, Yusin, Lee, SangKil, Jun, Chung Sam, Kim, Youn Sang
Format:	Artikel
Sprache:	eng
Schlagworte:	639/166/987 639/301/930/543 639/925/927/1007 639/925/930/12 Atomic force microscopy Fabrication Failure Humanities and Social Sciences Microscopes multidisciplinary Science Silicon Silicon oxide
Online-Zugang:	Volltext
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