Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al 2 O 3 ) acquires high negative fixed charge density ( Q f ) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q f can be controlled by varying the annealing tempera...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nanoscale research letters 2013-03, Vol.8 (1), p.114-114, Article 114
Hauptverfasser:	Zhao, Yan, Zhou, Chunlan, Zhang, Xiang, Zhang, Peng, Dou, Yanan, Wang, Wenjing, Cao, Xingzhong, Wang, Baoyi, Tang, Yehua, Zhou, Su
Format:	Artikel
Sprache:	eng
Schlagworte:	1st International Conference on ALD Applications & 2nd China ALD conference Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!