Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μ m and 8- to 12- μ m spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates un...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nanoscale research letters 2013-05, Vol.8 (1), p.217-217, Article 217
Hauptverfasser:	Yakimov, Andrew, Kirienko, Victor, Armbrister, Vladislav, Dvurechenskii, Anatolii
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!