Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga 1 −  x In x N y As 1 −  y /GaAs quantum well structures. The samples were grown by molecu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanoscale research letters 2012-11, Vol.7 (1), p.656-656, Article 656
Hauptverfasser: Erol, Ayse, Akalin, Elif, Sarcan, Fahrettin, Donmez, Omer, Akyuz, Sevim, Arikan, Cetin M, Puustinen, Janne, Guina, Mircea
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!