Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer

Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer

We investigated the effect of gallium oxide hydroxide (GaOOH) nanorod arrays (NRAs) on the light extraction of InGaN/GaN multiple quantum well blue light-emitting diodes (LEDs). GaOOH NRAs were prepared on an indium tin oxide electrode (ITO) layer of LEDs by electrochemical deposition method. The Ga...

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Veröffentlicht in:Nanoscale research letters 2012-08, Vol.7 (1), p.458-458, Article 458
Hauptverfasser: Lee, Hee Kwan, Joo, Dong Hyuk, Kim, Myung Sub, Yu, Jae Su
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Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
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creator Lee, Hee Kwan
Joo, Dong Hyuk
Kim, Myung Sub
Yu, Jae Su
description We investigated the effect of gallium oxide hydroxide (GaOOH) nanorod arrays (NRAs) on the light extraction of InGaN/GaN multiple quantum well blue light-emitting diodes (LEDs). GaOOH NRAs were prepared on an indium tin oxide electrode (ITO) layer of LEDs by electrochemical deposition method. The GaOOH NRAs with preferred orientations were grown on the ITO surface by sputtering a thin antimony-doped tin oxide seed layer, which enhances heterogeneous reactions. Surface density and coverage were also efficiently controlled by the different growth voltages. For LEDs with GaOOH NRAs grown at −2 V, the light output power was increased by 22% without suffering from any serious electrical degradation and wavelength shift as compared with conventional LEDs.
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subjects Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
title Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer
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