Morphological and nanostructural features of porous silicon prepared by electrochemical etching

Porous layers were produced on a p-type (100) Si wafer by electrochemical anodic etching. The morphological, nanostructural and optical features of the porous Si were investigated as functions of the etching conditions. As the wafer resistivity was increased from 0.005 to 15 Ω·cm, the etched region...

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Veröffentlicht in:	Nanoscale research letters 2012-07, Vol.7 (1), p.408-408, Article 408
Hauptverfasser:	Kim, Hyohan, Cho, Namhee
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Idea Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Porous Semiconductors - Science and Technology 2012
Online-Zugang:	Volltext
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