Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials
The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties prese...
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| Veröffentlicht in: | Scientific reports 2012-04, Vol.2 (1), p.360-360, Article 360 |
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| creator | Wang, Weijie Loke, Desmond Shi, Luping Zhao, Rong Yang, Hongxin Law, Leong-Tat Ng, Lung-Tat Lim, Kian-Guan Yeo, Yee-Chia Chong, Tow-Chong Lacaita, Andrea L. |
| description | The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory. |
| doi_str_mv | 10.1038/srep00360 |
| format | Article |
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Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep00360</identifier><identifier>PMID: 22496956</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/301 ; 639/638/440 ; 639/766/25 ; 639/925/357/995 ; Crystallization ; Grain size ; Humanities and Social Sciences ; multidisciplinary ; Nucleation ; Particle size ; Science</subject><ispartof>Scientific reports, 2012-04, Vol.2 (1), p.360-360, Article 360</ispartof><rights>The Author(s) 2012</rights><rights>Copyright Nature Publishing Group Apr 2012</rights><rights>Copyright © 2012, Macmillan Publishers Limited. All rights reserved 2012 Macmillan Publishers Limited. 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| subjects | 639/301 639/638/440 639/766/25 639/925/357/995 Crystallization Grain size Humanities and Social Sciences multidisciplinary Nucleation Particle size Science |
| title | Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials |
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