Surface-Related States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger Recombination
We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding to energy levels below and above the direct bandgap of the formed NCs. Tra...
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| Veröffentlicht in: | Nanoscale research letters 2008-09, Vol.3 (9), p.315-320, Article 315 |
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| creator | Othonos, Andreas Lioudakis, Emmanouil Nassiopoulou, AG |
| description | We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding to energy levels below and above the direct bandgap of the formed NCs. Transient photoinduced absorption techniques have been employed to investigate the effects of surface-related states on the relaxation dynamics of photogenerated carriers in 2.8 nm oxidized silicon NCs. Independent of the excitation photon energy, non-degenerate measurements reveal several distinct relaxation regions corresponding to relaxation of photoexcited carriers from the initial excited states, the lowest indirect states and the surface-related states. Furthermore, degenerate and non-degenerate measurements at difference excitation fluences reveal a linear dependence of the maximum of the photoinduced absorption (PA) signal and an identical decay, suggesting that Auger recombination does not play a significant role in these nanostructures even for fluence generating up to 20 carriers/NC. |
| doi_str_mv | 10.1007/s11671-008-9159-8 |
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Transient photoinduced absorption techniques have been employed to investigate the effects of surface-related states on the relaxation dynamics of photogenerated carriers in 2.8 nm oxidized silicon NCs. Independent of the excitation photon energy, non-degenerate measurements reveal several distinct relaxation regions corresponding to relaxation of photoexcited carriers from the initial excited states, the lowest indirect states and the surface-related states. Furthermore, degenerate and non-degenerate measurements at difference excitation fluences reveal a linear dependence of the maximum of the photoinduced absorption (PA) signal and an identical decay, suggesting that Auger recombination does not play a significant role in these nanostructures even for fluence generating up to 20 carriers/NC.</description><identifier>ISSN: 1556-276X</identifier><identifier>ISSN: 1931-7573</identifier><identifier>EISSN: 1556-276X</identifier><identifier>DOI: 10.1007/s11671-008-9159-8</identifier><language>eng</language><publisher>New York: Springer New York</publisher><subject>Absorption ; Augers ; Chemistry and Materials Science ; Crystals ; Energy levels ; Excitation ; Fluence ; Materials Science ; Molecular Medicine ; Nano Express ; Nanochemistry ; Nanocrystals ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering ; Photons ; Recombination ; Silicon ; Surface chemistry</subject><ispartof>Nanoscale research letters, 2008-09, Vol.3 (9), p.315-320, Article 315</ispartof><rights>to the authors 2008</rights><rights>to the authors 2008. This work is published under http://creativecommons.org/licenses/by/2/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>Copyright ©2008 to the authors 2008 to the authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-877b0d399de5e9fb28baccb54baca5ea2f82607d032428b12aeee6031cde76943</citedby><cites>FETCH-LOGICAL-c414t-877b0d399de5e9fb28baccb54baca5ea2f82607d032428b12aeee6031cde76943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC3244891/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC3244891/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,315,728,781,785,865,886,27928,27929,53795,53797</link.rule.ids></links><search><creatorcontrib>Othonos, Andreas</creatorcontrib><creatorcontrib>Lioudakis, Emmanouil</creatorcontrib><creatorcontrib>Nassiopoulou, AG</creatorcontrib><title>Surface-Related States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger Recombination</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><description>We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding to energy levels below and above the direct bandgap of the formed NCs. Transient photoinduced absorption techniques have been employed to investigate the effects of surface-related states on the relaxation dynamics of photogenerated carriers in 2.8 nm oxidized silicon NCs. Independent of the excitation photon energy, non-degenerate measurements reveal several distinct relaxation regions corresponding to relaxation of photoexcited carriers from the initial excited states, the lowest indirect states and the surface-related states. Furthermore, degenerate and non-degenerate measurements at difference excitation fluences reveal a linear dependence of the maximum of the photoinduced absorption (PA) signal and an identical decay, suggesting that Auger recombination does not play a significant role in these nanostructures even for fluence generating up to 20 carriers/NC.</description><subject>Absorption</subject><subject>Augers</subject><subject>Chemistry and Materials Science</subject><subject>Crystals</subject><subject>Energy levels</subject><subject>Excitation</subject><subject>Fluence</subject><subject>Materials Science</subject><subject>Molecular Medicine</subject><subject>Nano Express</subject><subject>Nanochemistry</subject><subject>Nanocrystals</subject><subject>Nanoscale Science and Technology</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><subject>Photons</subject><subject>Recombination</subject><subject>Silicon</subject><subject>Surface 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States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger Recombination</title><author>Othonos, Andreas ; Lioudakis, Emmanouil ; Nassiopoulou, AG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-877b0d399de5e9fb28baccb54baca5ea2f82607d032428b12aeee6031cde76943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Absorption</topic><topic>Augers</topic><topic>Chemistry and Materials Science</topic><topic>Crystals</topic><topic>Energy levels</topic><topic>Excitation</topic><topic>Fluence</topic><topic>Materials Science</topic><topic>Molecular Medicine</topic><topic>Nano Express</topic><topic>Nanochemistry</topic><topic>Nanocrystals</topic><topic>Nanoscale Science and Technology</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><topic>Photons</topic><topic>Recombination</topic><topic>Silicon</topic><topic>Surface 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silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding to energy levels below and above the direct bandgap of the formed NCs. Transient photoinduced absorption techniques have been employed to investigate the effects of surface-related states on the relaxation dynamics of photogenerated carriers in 2.8 nm oxidized silicon NCs. Independent of the excitation photon energy, non-degenerate measurements reveal several distinct relaxation regions corresponding to relaxation of photoexcited carriers from the initial excited states, the lowest indirect states and the surface-related states. Furthermore, degenerate and non-degenerate measurements at difference excitation fluences reveal a linear dependence of the maximum of the photoinduced absorption (PA) signal and an identical decay, suggesting that Auger recombination does not play a significant role in these nanostructures even for fluence generating up to 20 carriers/NC.</abstract><cop>New York</cop><pub>Springer New York</pub><doi>10.1007/s11671-008-9159-8</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Absorption Augers Chemistry and Materials Science Crystals Energy levels Excitation Fluence Materials Science Molecular Medicine Nano Express Nanochemistry Nanocrystals Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Photons Recombination Silicon Surface chemistry |
| title | Surface-Related States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger Recombination |
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