Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors

The 1/f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δ n- Δ μ model. As the temperature is lowered, the correlated mobility fluctuations become insig...

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Veröffentlicht in:	Applied physics letters 2010-12, Vol.97 (24), p.243501-243501-3
Hauptverfasser:	Rajan, Nitin K., Routenberg, David A., Chen, Jin, Reed, Mark A.
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Sprache:	eng
Schlagworte:	Device Physics
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container_issue	24
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container_title	Applied physics letters
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creator	Rajan, Nitin K. Routenberg, David A. Chen, Jin Reed, Mark A.
description	The 1/f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δ n- Δ μ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δ n -model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1/f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum.
doi_str_mv	10.1063/1.3526382
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title	Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors
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