Low voltage electrowetting-on-dielectric platform using multi-layer insulators
A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300 pl droplets from 140 nl closed on-chip reservoirs was accomplished with as little as 11.4 V solely through EWD forces, and the actuation threshold voltage was 7.2 V with...
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| Veröffentlicht in: | Sensors and actuators. B, Chemical Chemical, 2010-09, Vol.150 (1), p.465-470 |
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| container_title | Sensors and actuators. B, Chemical |
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| creator | Lin, Yan-You Evans, Randall D. Welch, Erin Hsu, Bang-Ning Madison, Andrew C. Fair, Richard B. |
| description | A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300
pl droplets from 140
nl closed on-chip reservoirs was accomplished with as little as 11.4
V solely through EWD forces, and the actuation threshold voltage was 7.2
V with a 1
Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135
nm sputtered tantalum pentoxide (Ta
2O
5) and 180
nm parylene C coated with 70
nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage,
V
T
, which is proportional to (
t/
ɛ
r
)
1/2, where
t and
ɛ
r
are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200
nm, 500
nm, and 1
μm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30
pl droplets. |
| doi_str_mv | 10.1016/j.snb.2010.06.059 |
| format | Article |
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pl droplets from 140
nl closed on-chip reservoirs was accomplished with as little as 11.4
V solely through EWD forces, and the actuation threshold voltage was 7.2
V with a 1
Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135
nm sputtered tantalum pentoxide (Ta
2O
5) and 180
nm parylene C coated with 70
nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage,
V
T
, which is proportional to (
t/
ɛ
r
)
1/2, where
t and
ɛ
r
are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200
nm, 500
nm, and 1
μm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30
pl droplets.</description><identifier>ISSN: 0925-4005</identifier><identifier>EISSN: 1873-3077</identifier><identifier>DOI: 10.1016/j.snb.2010.06.059</identifier><identifier>PMID: 20953362</identifier><language>eng</language><publisher>Switzerland: Elsevier B.V</publisher><subject>Actuation ; Devices ; Digital microfluidics ; Dimensional scaling ; Droplets ; Electrodes ; Electrowetting ; Insulators ; Multilayers ; Tantalum oxides ; Tantalum pentoxide ; Threshold voltage</subject><ispartof>Sensors and actuators. B, Chemical, 2010-09, Vol.150 (1), p.465-470</ispartof><rights>2010 Elsevier B.V.</rights><rights>2010 Elsevier B.V. All rights reserved. 2010</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-9e12a1f9883ee196f12df6edbe2b848358a1b794e644d182aae9ad5de1741a7f3</citedby><cites>FETCH-LOGICAL-c483t-9e12a1f9883ee196f12df6edbe2b848358a1b794e644d182aae9ad5de1741a7f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925400510005630$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/20953362$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lin, Yan-You</creatorcontrib><creatorcontrib>Evans, Randall D.</creatorcontrib><creatorcontrib>Welch, Erin</creatorcontrib><creatorcontrib>Hsu, Bang-Ning</creatorcontrib><creatorcontrib>Madison, Andrew C.</creatorcontrib><creatorcontrib>Fair, Richard B.</creatorcontrib><title>Low voltage electrowetting-on-dielectric platform using multi-layer insulators</title><title>Sensors and actuators. B, Chemical</title><addtitle>Sens Actuators B Chem</addtitle><description>A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300
pl droplets from 140
nl closed on-chip reservoirs was accomplished with as little as 11.4
V solely through EWD forces, and the actuation threshold voltage was 7.2
V with a 1
Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135
nm sputtered tantalum pentoxide (Ta
2O
5) and 180
nm parylene C coated with 70
nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage,
V
T
, which is proportional to (
t/
ɛ
r
)
1/2, where
t and
ɛ
r
are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200
nm, 500
nm, and 1
μm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30
pl droplets.</description><subject>Actuation</subject><subject>Devices</subject><subject>Digital microfluidics</subject><subject>Dimensional scaling</subject><subject>Droplets</subject><subject>Electrodes</subject><subject>Electrowetting</subject><subject>Insulators</subject><subject>Multilayers</subject><subject>Tantalum oxides</subject><subject>Tantalum pentoxide</subject><subject>Threshold voltage</subject><issn>0925-4005</issn><issn>1873-3077</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kcFu1DAQhi1E1S6lD8AF5QaXbD1O7NhCQkJVC0ircoGz5cSTxSsnXmxnq759XW2p4NKTZc83v2b8EfIO6BooiMvdOs39mtFyp2JNuXpFViC7pm5o170mK6oYr1tK-Rl5k9KOUto2gp6SM0YVbxrBVuR2E-6qQ_DZbLFCj0OO4Q5zdvO2DnNt3fHNDdXemzyGOFVLKsVqWnx2tTf3GCs3p6VUQ0xvyclofMKLp_Oc_Lq5_nn1rd78-Pr96sumHlrZ5FohMAOjkrJBBCVGYHYUaHtkvSwElwb6TrUo2taCZMagMpZbhK4F043NOfl8zN0v_YR2wDlH4_U-usnEex2M0_9XZvdbb8NBM8WZVKwEfHgKiOHPginryaUBvTczhiVpyRgHxZQo5McXyTKeAN4ByILCER1iSCni-DwQUP1oTO90MaYfjWkqdDFWet7_u8lzx19FBfh0BLD858Fh1GlwOA9oXSxqtA3uhfgHOvCpQg</recordid><startdate>20100921</startdate><enddate>20100921</enddate><creator>Lin, Yan-You</creator><creator>Evans, Randall D.</creator><creator>Welch, Erin</creator><creator>Hsu, Bang-Ning</creator><creator>Madison, Andrew C.</creator><creator>Fair, Richard B.</creator><general>Elsevier B.V</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>5PM</scope></search><sort><creationdate>20100921</creationdate><title>Low voltage electrowetting-on-dielectric platform using multi-layer insulators</title><author>Lin, Yan-You ; Evans, Randall D. ; Welch, Erin ; Hsu, Bang-Ning ; Madison, Andrew C. ; Fair, Richard B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c483t-9e12a1f9883ee196f12df6edbe2b848358a1b794e644d182aae9ad5de1741a7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Actuation</topic><topic>Devices</topic><topic>Digital microfluidics</topic><topic>Dimensional scaling</topic><topic>Droplets</topic><topic>Electrodes</topic><topic>Electrowetting</topic><topic>Insulators</topic><topic>Multilayers</topic><topic>Tantalum oxides</topic><topic>Tantalum pentoxide</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Yan-You</creatorcontrib><creatorcontrib>Evans, Randall D.</creatorcontrib><creatorcontrib>Welch, Erin</creatorcontrib><creatorcontrib>Hsu, Bang-Ning</creatorcontrib><creatorcontrib>Madison, Andrew C.</creatorcontrib><creatorcontrib>Fair, Richard B.</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Sensors and actuators. B, Chemical</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Yan-You</au><au>Evans, Randall D.</au><au>Welch, Erin</au><au>Hsu, Bang-Ning</au><au>Madison, Andrew C.</au><au>Fair, Richard B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low voltage electrowetting-on-dielectric platform using multi-layer insulators</atitle><jtitle>Sensors and actuators. B, Chemical</jtitle><addtitle>Sens Actuators B Chem</addtitle><date>2010-09-21</date><risdate>2010</risdate><volume>150</volume><issue>1</issue><spage>465</spage><epage>470</epage><pages>465-470</pages><issn>0925-4005</issn><eissn>1873-3077</eissn><abstract>A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300
pl droplets from 140
nl closed on-chip reservoirs was accomplished with as little as 11.4
V solely through EWD forces, and the actuation threshold voltage was 7.2
V with a 1
Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135
nm sputtered tantalum pentoxide (Ta
2O
5) and 180
nm parylene C coated with 70
nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage,
V
T
, which is proportional to (
t/
ɛ
r
)
1/2, where
t and
ɛ
r
are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200
nm, 500
nm, and 1
μm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30
pl droplets.</abstract><cop>Switzerland</cop><pub>Elsevier B.V</pub><pmid>20953362</pmid><doi>10.1016/j.snb.2010.06.059</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0925-4005 |
| ispartof | Sensors and actuators. B, Chemical, 2010-09, Vol.150 (1), p.465-470 |
| issn | 0925-4005 1873-3077 |
| language | eng |
| recordid | cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_2952892 |
| source | Elsevier ScienceDirect Journals |
| subjects | Actuation Devices Digital microfluidics Dimensional scaling Droplets Electrodes Electrowetting Insulators Multilayers Tantalum oxides Tantalum pentoxide Threshold voltage |
| title | Low voltage electrowetting-on-dielectric platform using multi-layer insulators |
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