Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO2 interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Proceedings of the National Academy of Sciences - PNAS 2024-10, Vol.121 (44), p.1
Hauptverfasser:	Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter
Format:	Artikel
Sprache:	eng
Schlagworte:	Computers Electrostatic properties Energy loss Fluctuations Physical Sciences Quantum sensors Semiconductor devices Silicon dioxide
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!