Electrical performance of La-doped In2O3 thin-film transistors prepared using a solution method for low-voltage driving

In this paper, La-doped In2O3 thin-film transistors (TFTs) were prepared by using a solution method, and the effects of La doping on the structure, surface morphology, optics, and performance of In2O3 thin films and TFTs were systematically investigated. The oxygen defects concentration decreased fr...

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Veröffentlicht in:	RSC advances 2024-05, Vol.14 (22), p.15483-15490
Hauptverfasser:	Du, Hongguo, Tuokedaerhan, Kamale, Zhang, Renjia
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Defects Doping Electronic systems Indium oxides Oxygen Semiconductor devices Thin film transistors Threshold voltage Transistors
Online-Zugang:	Volltext
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