Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures

Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold cu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ACS applied nano materials 2023-12, Vol.6 (23), p.21663-21670
Hauptverfasser:	Durante, Ofelia, Intonti, Kimberly, Viscardi, Loredana, De Stefano, Sebastiano, Faella, Enver, Kumar, Arun, Pelella, Aniello, Romeo, Francesco, Giubileo, Filippo, Alghamdi, Manal Safar G, Alshehri, Mohammed Ali S, Craciun, Monica F, Russo, Saverio, Di Bartolomeo, Antonio
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!