Defect-Mediated Atomic Layer Etching Processes on Cl–Si(100): An Atomistic Insight

Defects play a significant role in atomic layer etching (ALE) processes; however, a fundamental understanding at the atomic level is still lacking. To bridge this knowledge gap, this study investigated the role of point defects in the laser-induced ALE of Cl–Si(100) using density functional theory (...

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Veröffentlicht in:	Journal of physical chemistry. C 2023-11, Vol.127 (43), p.21106-21113
Hauptverfasser:	Wang, Peizhi, Fang, Fengzhou
Format:	Artikel
Sprache:	eng
Schlagworte:	C: Chemical and Catalytic Reactivity at Interfaces
Online-Zugang:	Volltext
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