Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite
The properties of Pb1−xMnxTe/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical sp...
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| Veröffentlicht in: | Materials 2023-06, Vol.16 (12), p.4211 |
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| creator | Chusnutdinow, Sergij Kazakov, Alexander Jakieła, Rafał Szot, Michał Schreyeck, Steffen Brunner, Karl Karczewski, Grzegorz |
| description | The properties of Pb1−xMnxTe/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb1−xMnxTe/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb1−xMnxTe conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb1−xMnxTe with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis. |
| doi_str_mv | 10.3390/ma16124211 |
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The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb1−xMnxTe/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb1−xMnxTe conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb1−xMnxTe with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma16124211</identifier><identifier>PMID: 37374395</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Cadmium tellurides ; Cut off wavelength ; Electron transport ; Energy gap ; Epitaxial growth ; Indium ; Infrared detectors ; Interfacial bonding ; Lasers ; Manganese ; Molecular beam epitaxy ; Morphology ; Multilayers ; Photovoltaic cells ; Secondary ion mass spectroscopy ; Semiconductors ; Sensors ; Spectral sensitivity ; Spectrum analysis ; Substrates ; Temperature</subject><ispartof>Materials, 2023-06, Vol.16 (12), p.4211</ispartof><rights>2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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| subjects | Cadmium tellurides Cut off wavelength Electron transport Energy gap Epitaxial growth Indium Infrared detectors Interfacial bonding Lasers Manganese Molecular beam epitaxy Morphology Multilayers Photovoltaic cells Secondary ion mass spectroscopy Semiconductors Sensors Spectral sensitivity Spectrum analysis Substrates Temperature |
| title | Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite |
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