Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films

Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi 2 Te 3 and Bi 2− x Sb x Te 3− y Se y (B...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2024-11, Vol.26 (46), p.2936-2947
Hauptverfasser:	Kumar, N, Ishchenko, D. V, Milekhin, I. A, Yunin, P. A, Kyrova, E. D, Korsakov, A. V, Tereshchenko, O. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth tellurides Conduction bands Electron states Electron transport Excitation Phonons Polarization Raman spectra Room temperature Thin films Topological insulators Vibration mode
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