Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films
Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi 2 Te 3 and Bi 2− x Sb x Te 3− y Se y (B...
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| Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2024-11, Vol.26 (46), p.2936-2947 |
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| container_title | Physical chemistry chemical physics : PCCP |
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| creator | Kumar, N Ishchenko, D. V Milekhin, I. A Yunin, P. A Kyrova, E. D Korsakov, A. V Tereshchenko, O. E |
| description | Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi
2
Te
3
and Bi
2−
x
Sb
x
Te
3−
y
Se
y
(BSTS) thin films was investigated. At photon energies (
E
p
) of 1.57 and 2.54 eV, A
1
1g
and A
2
1g
(LO) modes in Bi
2
Te
3
and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E
1
u
(LO) and A
1
1u
(LO) was observed in Bi
2
Te
3
because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A
2
1u
(LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states.
Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). |
| doi_str_mv | 10.1039/d4cp02994a |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmed_primary_39552495</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3133271080</sourcerecordid><originalsourceid>FETCH-LOGICAL-c226t-b94ccfea75e4a303269c6a61bacc96c1213e5238f09788b8f46e798ba47bb6ba3</originalsourceid><addsrcrecordid>eNpd0U1rFTEUBuAgFlurG_dKwI0Io_mazGRZb2srVCyi6-EkN9OmZpIxyVj1R_Q3m95br-Aqh7wPhwMvQs8oeUMJV2_XwsyEKSXgATqgQvJGkV483M2d3EePc74mhNCW8kdon6u2ZUK1B-j2InpI7jcUF0OTbI7-h13juyFAKPgzTBCw_Wlc2RAcR5yXNIKxGMIa68V_w9ZbU1IMzmBdP_Mmma9iiCFjF_DHdyfNZYo3AZc4Rx8vnQFfg7x4KDHhclXR6PyUn6C9EXy2T-_fQ_T1_cmX1Vlz_un0w-rovDGMydJoJYwZLXStFcAJZ1IZCZJqMEZJQxnltmW8H4nq-l73o5C2U70G0WktNfBD9Gq7d07x-2JzGSaXjfUego1LHjhlSvacdbzSl__R67ikUK-rildCSU-qer1VJsWckx2HObkJ0q-BkuGupeFYrC42LR1V_OJ-5aInu97Rv7VU8HwLUja79F_N_A8Kh5lb</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3133271080</pqid></control><display><type>article</type><title>Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Kumar, N ; Ishchenko, D. V ; Milekhin, I. A ; Yunin, P. A ; Kyrova, E. D ; Korsakov, A. V ; Tereshchenko, O. E</creator><creatorcontrib>Kumar, N ; Ishchenko, D. V ; Milekhin, I. A ; Yunin, P. A ; Kyrova, E. D ; Korsakov, A. V ; Tereshchenko, O. E</creatorcontrib><description>Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi
2
Te
3
and Bi
2−
x
Sb
x
Te
3−
y
Se
y
(BSTS) thin films was investigated. At photon energies (
E
p
) of 1.57 and 2.54 eV, A
1
1g
and A
2
1g
(LO) modes in Bi
2
Te
3
and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E
1
u
(LO) and A
1
1u
(LO) was observed in Bi
2
Te
3
because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A
2
1u
(LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states.
Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs).</description><identifier>ISSN: 1463-9076</identifier><identifier>ISSN: 1463-9084</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/d4cp02994a</identifier><identifier>PMID: 39552495</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Bismuth tellurides ; Conduction bands ; Electron states ; Electron transport ; Excitation ; Phonons ; Polarization ; Raman spectra ; Room temperature ; Thin films ; Topological insulators ; Vibration mode</subject><ispartof>Physical chemistry chemical physics : PCCP, 2024-11, Vol.26 (46), p.2936-2947</ispartof><rights>Copyright Royal Society of Chemistry 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c226t-b94ccfea75e4a303269c6a61bacc96c1213e5238f09788b8f46e798ba47bb6ba3</cites><orcidid>0000-0002-4922-7658</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39552495$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kumar, N</creatorcontrib><creatorcontrib>Ishchenko, D. V</creatorcontrib><creatorcontrib>Milekhin, I. A</creatorcontrib><creatorcontrib>Yunin, P. A</creatorcontrib><creatorcontrib>Kyrova, E. D</creatorcontrib><creatorcontrib>Korsakov, A. V</creatorcontrib><creatorcontrib>Tereshchenko, O. E</creatorcontrib><title>Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films</title><title>Physical chemistry chemical physics : PCCP</title><addtitle>Phys Chem Chem Phys</addtitle><description>Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi
2
Te
3
and Bi
2−
x
Sb
x
Te
3−
y
Se
y
(BSTS) thin films was investigated. At photon energies (
E
p
) of 1.57 and 2.54 eV, A
1
1g
and A
2
1g
(LO) modes in Bi
2
Te
3
and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E
1
u
(LO) and A
1
1u
(LO) was observed in Bi
2
Te
3
because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A
2
1u
(LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states.
Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs).</description><subject>Bismuth tellurides</subject><subject>Conduction bands</subject><subject>Electron states</subject><subject>Electron transport</subject><subject>Excitation</subject><subject>Phonons</subject><subject>Polarization</subject><subject>Raman spectra</subject><subject>Room temperature</subject><subject>Thin films</subject><subject>Topological insulators</subject><subject>Vibration mode</subject><issn>1463-9076</issn><issn>1463-9084</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpd0U1rFTEUBuAgFlurG_dKwI0Io_mazGRZb2srVCyi6-EkN9OmZpIxyVj1R_Q3m95br-Aqh7wPhwMvQs8oeUMJV2_XwsyEKSXgATqgQvJGkV483M2d3EePc74mhNCW8kdon6u2ZUK1B-j2InpI7jcUF0OTbI7-h13juyFAKPgzTBCw_Wlc2RAcR5yXNIKxGMIa68V_w9ZbU1IMzmBdP_Mmma9iiCFjF_DHdyfNZYo3AZc4Rx8vnQFfg7x4KDHhclXR6PyUn6C9EXy2T-_fQ_T1_cmX1Vlz_un0w-rovDGMydJoJYwZLXStFcAJZ1IZCZJqMEZJQxnltmW8H4nq-l73o5C2U70G0WktNfBD9Gq7d07x-2JzGSaXjfUego1LHjhlSvacdbzSl__R67ikUK-rildCSU-qer1VJsWckx2HObkJ0q-BkuGupeFYrC42LR1V_OJ-5aInu97Rv7VU8HwLUja79F_N_A8Kh5lb</recordid><startdate>20241127</startdate><enddate>20241127</enddate><creator>Kumar, N</creator><creator>Ishchenko, D. V</creator><creator>Milekhin, I. A</creator><creator>Yunin, P. A</creator><creator>Kyrova, E. D</creator><creator>Korsakov, A. V</creator><creator>Tereshchenko, O. E</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-4922-7658</orcidid></search><sort><creationdate>20241127</creationdate><title>Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films</title><author>Kumar, N ; Ishchenko, D. V ; Milekhin, I. A ; Yunin, P. A ; Kyrova, E. D ; Korsakov, A. V ; Tereshchenko, O. E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c226t-b94ccfea75e4a303269c6a61bacc96c1213e5238f09788b8f46e798ba47bb6ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Bismuth tellurides</topic><topic>Conduction bands</topic><topic>Electron states</topic><topic>Electron transport</topic><topic>Excitation</topic><topic>Phonons</topic><topic>Polarization</topic><topic>Raman spectra</topic><topic>Room temperature</topic><topic>Thin films</topic><topic>Topological insulators</topic><topic>Vibration mode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, N</creatorcontrib><creatorcontrib>Ishchenko, D. V</creatorcontrib><creatorcontrib>Milekhin, I. A</creatorcontrib><creatorcontrib>Yunin, P. A</creatorcontrib><creatorcontrib>Kyrova, E. D</creatorcontrib><creatorcontrib>Korsakov, A. V</creatorcontrib><creatorcontrib>Tereshchenko, O. E</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, N</au><au>Ishchenko, D. V</au><au>Milekhin, I. A</au><au>Yunin, P. A</au><au>Kyrova, E. D</au><au>Korsakov, A. V</au><au>Tereshchenko, O. E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><addtitle>Phys Chem Chem Phys</addtitle><date>2024-11-27</date><risdate>2024</risdate><volume>26</volume><issue>46</issue><spage>2936</spage><epage>2947</epage><pages>2936-2947</pages><issn>1463-9076</issn><issn>1463-9084</issn><eissn>1463-9084</eissn><abstract>Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi
2
Te
3
and Bi
2−
x
Sb
x
Te
3−
y
Se
y
(BSTS) thin films was investigated. At photon energies (
E
p
) of 1.57 and 2.54 eV, A
1
1g
and A
2
1g
(LO) modes in Bi
2
Te
3
and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E
1
u
(LO) and A
1
1u
(LO) was observed in Bi
2
Te
3
because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A
2
1u
(LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states.
Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs).</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>39552495</pmid><doi>10.1039/d4cp02994a</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-4922-7658</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1463-9076 |
| ispartof | Physical chemistry chemical physics : PCCP, 2024-11, Vol.26 (46), p.2936-2947 |
| issn | 1463-9076 1463-9084 1463-9084 |
| language | eng |
| recordid | cdi_pubmed_primary_39552495 |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Bismuth tellurides Conduction bands Electron states Electron transport Excitation Phonons Polarization Raman spectra Room temperature Thin films Topological insulators Vibration mode |
| title | Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films |
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