Enhancing the Resistive Switching Properties of Transparent HfO 2 -Based Memristor Devices for Reliable Gasistor Applications

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and...

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Veröffentlicht in:	Sensors (Basel, Switzerland) Switzerland), 2024-10, Vol.24 (19)
Hauptverfasser:	Kim, Taegi, Lee, Doowon, Chae, Myoungsu, Kim, Kyeong-Heon, Kim, Hee-Dong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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