Rhombohedral R3 Phase of Mn-Doped Hf 0.5 Zr 0.5 O 2 Epitaxial Films with Robust Ferroelectricity

HfO -based ferroelectric materials are emerging as key components for next-generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon-based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric ortho...

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Veröffentlicht in:	Advanced materials (Weinheim) 2024-11, Vol.36 (47), p.e2406038
Hauptverfasser:	Guo, Jiasheng, Tao, Lei, Xu, Xing, Hou, Lingxuan, Nan, Ce-Wen, Du, Shixuan, Chen, Chonglin, Ma, Jing
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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