Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator

Achieving energy-efficient and high-performance field-effect transistors (FETs) is one of the most important goals for future electronic devices. This paper reports semiconducting single-walled carbon nanotube FETs (s-SWNT-FETs) with an optimized high-k relaxor ferroelectric insulator P(VDF-TrFE-CFE...

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Veröffentlicht in:	Nanotechnology 2024-07, Vol.35 (29), p.295202
Hauptverfasser:	Yang, Dongseong, Moon, Yina, Han, Nara, Lee, Minwoo, Beak, Jeongwoo, Lee, Seung-Hoon, Kim, Dong-Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	capacitance control carbon nanotube field-effect transistor ferroelectric high-k insulator low-voltage operation
Online-Zugang:	Volltext
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