Plasma Nitridation Effect on β -Ga 2 O 3 Semiconductors
The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the con...
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| Veröffentlicht in: | Nanomaterials (Basel, Switzerland) Switzerland), 2023-03, Vol.13 (7) |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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