Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN x :H Resistive Switching Memory by the Transient Current

With the big data and artificial intelligence era coming, SiN -based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of biological synapses. However, an effective way to...

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Veröffentlicht in:	Nanomaterials (Basel, Switzerland) Switzerland), 2022-12, Vol.13 (1)
Hauptverfasser:	Chen, Tong, Leng, Kangmin, Ma, Zhongyuan, Jiang, Xiaofan, Chen, Kunji, Li, Wei, Xu, Jun, Xu, Ling
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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