The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga 2 O 3 Thin Films on C-Plane Sapphire

β-Ga O thin films grown on widely available c-plane sapphire substrates typically exhibit structural defects due to significant lattice and thermal expansion mismatch, which hinder the use of such films in electronic devices. In this work, we studied the impact of a nucleation layer on MOCVD-grown β...

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Veröffentlicht in:	Materials 2022-11, Vol.15 (23)
Hauptverfasser:	Dimitrocenko, Lauris, Strikis, Gundars, Polyakov, Boris, Bikse, Liga, Oras, Sven, Butanovs, Edgars
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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