Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures

To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V Ga heterostructure maintains a p-type Schottky contact in th...

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Veröffentlicht in:	RSC advances 2019-05, Vol.9 (24), p.13418-13423
Hauptverfasser:	Deng, Zhongxun, Wang, Xianhui, Cui, Jie
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Contact resistance Defects First principles Gallium nitrides Graphene Heterostructures Interlayers Nanoelectronics Nanotechnology devices
Online-Zugang:	Volltext
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