Selective area growth of AlGaN nanopyramids by conventional and pulsed MOVPE

Planar UV-C light emitting diodes still suffer from low efficiency, mainly due to substrate crystalline quality, p doped conductivity and extraction efficiency. One possible way to overcome partly these issues is to realize the whole UV structure on AlGaN pyramids by selective area growth in order t...

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Veröffentlicht in:	Nanotechnology 2021-05, Vol.32 (19), p.195203-195203
Hauptverfasser:	Boughaleb, Sofia, Martin, Brigitte, Matei, Constantin, Templier, Roselyne, Borowik, Łukasz, Rochat, Nevine, Gil, Bernard, Dussaigne, Amélie
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN alloy AlGaN pyramids Condensed Matter MOVPE Other Physics pulsed growth mode selective area growth UV LEDs
Online-Zugang:	Volltext
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