Anti-oxidant copper layer by remote mode N 2 plasma for low temperature copper-copper bonding

An anti-oxidant Cu layer was achieved by remote mode N plasma. Remote mode plasma treatment offers the advantages of having no defect formation, such as pinholes, by energetic ions. In this study, an activated Cu surface by Ar plasma chemically reacted with N free radicals to evenly form Cu nitride passivation over the entire Cu surface. According to chemical state analysis using XPS, Cu oxidation was effectively prevented in air, and the thickness of the Cu nitride passivation was within 3 nm. Based on statistical analysis using the DOE technique with N plasma variables, namely, RF power, working pressure, and plasma treatment time, we experimentally demonstrated that a lower RF power is the most effective for forming uniform Cu nitride passivation because of a lower plasma density. When the N plasma density reached approximately 10 cm in which the remote mode was generated, high energy electrons in the plasma were significantly reduced and the amount of oxygen detected on the Cu surface was minimized. Finally, low temperature (300 °C) Cu-Cu bonding was performed with a pair of the anti-oxidant Cu layers formed by the remote mode N plasma. Cu atomic diffusion with new grains was observed across the bonded interface indicating significantly improved bonding quality over bare Cu-Cu bonding.