Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature

Monolayer-thin WS with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF and H S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al O starting surface. We investigate the growth and nucleation mechanism during the CVD process by...

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Veröffentlicht in:	The Journal of chemical physics 2019-03, Vol.150 (10), p.104703
Hauptverfasser:	Groven, B, Claes, D, Nalin Mehta, A, Bender, H, Vandervorst, W, Heyns, M, Caymax, M, Radu, I, Delabie, A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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