Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature
Monolayer-thin WS with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF and H S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al O starting surface. We investigate the growth and nucleation mechanism during the CVD process by...
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| Veröffentlicht in: | The Journal of chemical physics 2019-03, Vol.150 (10), p.104703 |
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| creator | Groven, B Claes, D Nalin Mehta, A Bender, H Vandervorst, W Heyns, M Caymax, M Radu, I Delabie, A |
| description | Monolayer-thin WS
with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF
and H
S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al
O
starting surface. We investigate the growth and nucleation mechanism during the CVD process by analyzing the morphology of the WS
crystals. The CVD process consists of two distinct growth regimes. During (i) the initial growth regime, a fast and self-limiting reaction of the CVD precursors with the Al
O
starting surface forms predominantly monolayer-thin WS
crystals and AlF
crystals that completely cover the starting surface. During (ii) the steady-state growth regime, a much slower, anisotropic reaction on the bottom, first WS
layer proceeds with the next WS
layer growing preferentially in the lateral dimensions. We propose that the precursor adsorption reaction rate strongly diminishes when the precursors have no more access to the Al
O
surface as soon as the WS
layer completely covers the Al
O
surface and that the WS
crystal basal planes and AlF
crystals have a low reactivity for WF
adsorption at 450 °C. Nonetheless, a second layer of WS
starts to form before the first WS
layer completely covers the starting surface, albeit the surface coverage of the second layer is low ( |
| doi_str_mv | 10.1063/1.5048346 |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed</sourceid><recordid>TN_cdi_pubmed_primary_30876349</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>30876349</sourcerecordid><originalsourceid>FETCH-LOGICAL-p93t-73e6ea0bf7799f9267e7f3b401b51ec28645d1a77b35fb37ce91d3ac3f153ab3</originalsourceid><addsrcrecordid>eNpN0EFLwzAYxvEgiJvTg19A3i_QmfRtk-Yowzlh4GHCjiNp37BK24Q0Veand6CCp-fwh9_hYexO8KXgEh_EsuRFhYW8YHPBK50pqfmMXY_jO-dcqLy4YjPklZJY6Dn7Wh2pb2vTwYcJPkJDwY9tav0A3kHvB9-ZE8UsHdsB9jvIoY6nMZluBBd9D-lIsF-DBDM0sDnnHYRI9RRHH0cwCTr_-R9N1AeKJk2RbtilOzt0-7sLtls_va022fb1-WX1uM2CxpQpJEmGW6eU1k7nUpFyaAsubCmozitZlI0wSlksnUVVkxYNmhqdKNFYXLD7HzVMtqfmEGLbm3g6_F2A39JKW7Q</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Groven, B ; Claes, D ; Nalin Mehta, A ; Bender, H ; Vandervorst, W ; Heyns, M ; Caymax, M ; Radu, I ; Delabie, A</creator><creatorcontrib>Groven, B ; Claes, D ; Nalin Mehta, A ; Bender, H ; Vandervorst, W ; Heyns, M ; Caymax, M ; Radu, I ; Delabie, A</creatorcontrib><description>Monolayer-thin WS
with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF
and H
S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al
O
starting surface. We investigate the growth and nucleation mechanism during the CVD process by analyzing the morphology of the WS
crystals. The CVD process consists of two distinct growth regimes. During (i) the initial growth regime, a fast and self-limiting reaction of the CVD precursors with the Al
O
starting surface forms predominantly monolayer-thin WS
crystals and AlF
crystals that completely cover the starting surface. During (ii) the steady-state growth regime, a much slower, anisotropic reaction on the bottom, first WS
layer proceeds with the next WS
layer growing preferentially in the lateral dimensions. We propose that the precursor adsorption reaction rate strongly diminishes when the precursors have no more access to the Al
O
surface as soon as the WS
layer completely covers the Al
O
surface and that the WS
crystal basal planes and AlF
crystals have a low reactivity for WF
adsorption at 450 °C. Nonetheless, a second layer of WS
starts to form before the first WS
layer completely covers the starting surface, albeit the surface coverage of the second layer is low (<20%, after 25 min of CVD reaction). During the steady-state growth regime, predominantly the WS
crystals in the second monolayer continue to grow in lateral dimensions up to ∼40 nm. These crystals reach larger lateral dimensions compared to the crystals in the bottom, first layer due to low reactivity for WF
adsorption on the WS
basal plane compared to Al
O
. Presumably, they grow laterally by precursor species that adsorb on and diffuse across the WS
surface, before being incorporated at the more reactive edges of the WS
crystals in the second layer. Such a process proceeds slowly with only up to 40% surface coverage of the second WS
layer after 150 min of CVD reaction. The CVD reaction is mediated by the starting surface: WF
precursor preferentially adsorbs on Al
O
, whereas adsorption is not observed on SiO
. Nevertheless, WS
grows on SiO
in close proximity to Al
O
in 90 nm pitch Al
O
/SiO
line patterns. Hence, functionalization of the starting surface (e.g., SiO
with Al
O
) can provide opportunities to grow monolayer-thin WS
crystals at predetermined locations by selective, lateral growth with tunable crystal size, even at low deposition temperatures.</description><identifier>EISSN: 1089-7690</identifier><identifier>DOI: 10.1063/1.5048346</identifier><identifier>PMID: 30876349</identifier><language>eng</language><publisher>United States</publisher><ispartof>The Journal of chemical physics, 2019-03, Vol.150 (10), p.104703</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000000211994341 ; 000000022169940X ; 0000000272307218 ; 0000000197397419 ; 0000000162186291 ; 0000000257817594</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30876349$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Groven, B</creatorcontrib><creatorcontrib>Claes, D</creatorcontrib><creatorcontrib>Nalin Mehta, A</creatorcontrib><creatorcontrib>Bender, H</creatorcontrib><creatorcontrib>Vandervorst, W</creatorcontrib><creatorcontrib>Heyns, M</creatorcontrib><creatorcontrib>Caymax, M</creatorcontrib><creatorcontrib>Radu, I</creatorcontrib><creatorcontrib>Delabie, A</creatorcontrib><title>Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature</title><title>The Journal of chemical physics</title><addtitle>J Chem Phys</addtitle><description>Monolayer-thin WS
with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF
and H
S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al
O
starting surface. We investigate the growth and nucleation mechanism during the CVD process by analyzing the morphology of the WS
crystals. The CVD process consists of two distinct growth regimes. During (i) the initial growth regime, a fast and self-limiting reaction of the CVD precursors with the Al
O
starting surface forms predominantly monolayer-thin WS
crystals and AlF
crystals that completely cover the starting surface. During (ii) the steady-state growth regime, a much slower, anisotropic reaction on the bottom, first WS
layer proceeds with the next WS
layer growing preferentially in the lateral dimensions. We propose that the precursor adsorption reaction rate strongly diminishes when the precursors have no more access to the Al
O
surface as soon as the WS
layer completely covers the Al
O
surface and that the WS
crystal basal planes and AlF
crystals have a low reactivity for WF
adsorption at 450 °C. Nonetheless, a second layer of WS
starts to form before the first WS
layer completely covers the starting surface, albeit the surface coverage of the second layer is low (<20%, after 25 min of CVD reaction). During the steady-state growth regime, predominantly the WS
crystals in the second monolayer continue to grow in lateral dimensions up to ∼40 nm. These crystals reach larger lateral dimensions compared to the crystals in the bottom, first layer due to low reactivity for WF
adsorption on the WS
basal plane compared to Al
O
. Presumably, they grow laterally by precursor species that adsorb on and diffuse across the WS
surface, before being incorporated at the more reactive edges of the WS
crystals in the second layer. Such a process proceeds slowly with only up to 40% surface coverage of the second WS
layer after 150 min of CVD reaction. The CVD reaction is mediated by the starting surface: WF
precursor preferentially adsorbs on Al
O
, whereas adsorption is not observed on SiO
. Nevertheless, WS
grows on SiO
in close proximity to Al
O
in 90 nm pitch Al
O
/SiO
line patterns. Hence, functionalization of the starting surface (e.g., SiO
with Al
O
) can provide opportunities to grow monolayer-thin WS
crystals at predetermined locations by selective, lateral growth with tunable crystal size, even at low deposition temperatures.</description><issn>1089-7690</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpN0EFLwzAYxvEgiJvTg19A3i_QmfRtk-Yowzlh4GHCjiNp37BK24Q0Veand6CCp-fwh9_hYexO8KXgEh_EsuRFhYW8YHPBK50pqfmMXY_jO-dcqLy4YjPklZJY6Dn7Wh2pb2vTwYcJPkJDwY9tav0A3kHvB9-ZE8UsHdsB9jvIoY6nMZluBBd9D-lIsF-DBDM0sDnnHYRI9RRHH0cwCTr_-R9N1AeKJk2RbtilOzt0-7sLtls_va022fb1-WX1uM2CxpQpJEmGW6eU1k7nUpFyaAsubCmozitZlI0wSlksnUVVkxYNmhqdKNFYXLD7HzVMtqfmEGLbm3g6_F2A39JKW7Q</recordid><startdate>20190314</startdate><enddate>20190314</enddate><creator>Groven, B</creator><creator>Claes, D</creator><creator>Nalin Mehta, A</creator><creator>Bender, H</creator><creator>Vandervorst, W</creator><creator>Heyns, M</creator><creator>Caymax, M</creator><creator>Radu, I</creator><creator>Delabie, A</creator><scope>NPM</scope><orcidid>https://orcid.org/0000000211994341</orcidid><orcidid>https://orcid.org/000000022169940X</orcidid><orcidid>https://orcid.org/0000000272307218</orcidid><orcidid>https://orcid.org/0000000197397419</orcidid><orcidid>https://orcid.org/0000000162186291</orcidid><orcidid>https://orcid.org/0000000257817594</orcidid></search><sort><creationdate>20190314</creationdate><title>Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature</title><author>Groven, B ; Claes, D ; Nalin Mehta, A ; Bender, H ; Vandervorst, W ; Heyns, M ; Caymax, M ; Radu, I ; Delabie, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p93t-73e6ea0bf7799f9267e7f3b401b51ec28645d1a77b35fb37ce91d3ac3f153ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Groven, B</creatorcontrib><creatorcontrib>Claes, D</creatorcontrib><creatorcontrib>Nalin Mehta, A</creatorcontrib><creatorcontrib>Bender, H</creatorcontrib><creatorcontrib>Vandervorst, W</creatorcontrib><creatorcontrib>Heyns, M</creatorcontrib><creatorcontrib>Caymax, M</creatorcontrib><creatorcontrib>Radu, I</creatorcontrib><creatorcontrib>Delabie, A</creatorcontrib><collection>PubMed</collection><jtitle>The Journal of chemical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Groven, B</au><au>Claes, D</au><au>Nalin Mehta, A</au><au>Bender, H</au><au>Vandervorst, W</au><au>Heyns, M</au><au>Caymax, M</au><au>Radu, I</au><au>Delabie, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature</atitle><jtitle>The Journal of chemical physics</jtitle><addtitle>J Chem Phys</addtitle><date>2019-03-14</date><risdate>2019</risdate><volume>150</volume><issue>10</issue><spage>104703</spage><pages>104703-</pages><eissn>1089-7690</eissn><abstract>Monolayer-thin WS
with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF
and H
S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al
O
starting surface. We investigate the growth and nucleation mechanism during the CVD process by analyzing the morphology of the WS
crystals. The CVD process consists of two distinct growth regimes. During (i) the initial growth regime, a fast and self-limiting reaction of the CVD precursors with the Al
O
starting surface forms predominantly monolayer-thin WS
crystals and AlF
crystals that completely cover the starting surface. During (ii) the steady-state growth regime, a much slower, anisotropic reaction on the bottom, first WS
layer proceeds with the next WS
layer growing preferentially in the lateral dimensions. We propose that the precursor adsorption reaction rate strongly diminishes when the precursors have no more access to the Al
O
surface as soon as the WS
layer completely covers the Al
O
surface and that the WS
crystal basal planes and AlF
crystals have a low reactivity for WF
adsorption at 450 °C. Nonetheless, a second layer of WS
starts to form before the first WS
layer completely covers the starting surface, albeit the surface coverage of the second layer is low (<20%, after 25 min of CVD reaction). During the steady-state growth regime, predominantly the WS
crystals in the second monolayer continue to grow in lateral dimensions up to ∼40 nm. These crystals reach larger lateral dimensions compared to the crystals in the bottom, first layer due to low reactivity for WF
adsorption on the WS
basal plane compared to Al
O
. Presumably, they grow laterally by precursor species that adsorb on and diffuse across the WS
surface, before being incorporated at the more reactive edges of the WS
crystals in the second layer. Such a process proceeds slowly with only up to 40% surface coverage of the second WS
layer after 150 min of CVD reaction. The CVD reaction is mediated by the starting surface: WF
precursor preferentially adsorbs on Al
O
, whereas adsorption is not observed on SiO
. Nevertheless, WS
grows on SiO
in close proximity to Al
O
in 90 nm pitch Al
O
/SiO
line patterns. Hence, functionalization of the starting surface (e.g., SiO
with Al
O
) can provide opportunities to grow monolayer-thin WS
crystals at predetermined locations by selective, lateral growth with tunable crystal size, even at low deposition temperatures.</abstract><cop>United States</cop><pmid>30876349</pmid><doi>10.1063/1.5048346</doi><orcidid>https://orcid.org/0000000211994341</orcidid><orcidid>https://orcid.org/000000022169940X</orcidid><orcidid>https://orcid.org/0000000272307218</orcidid><orcidid>https://orcid.org/0000000197397419</orcidid><orcidid>https://orcid.org/0000000162186291</orcidid><orcidid>https://orcid.org/0000000257817594</orcidid></addata></record> |
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| language | eng |
| recordid | cdi_pubmed_primary_30876349 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| title | Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature |
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