Breaking Down Resonance: Non-Linear Transport and the Breakdown of Coherent Tunneling Models in Single Molecule Junctions

The promise of the field of single-molecule electronics is to reveal a new class of quantum devices that leverages the strong electronic interactions inherent to sub-nanometer scale systems. Here, we form Au-molecule-Au junctions using a custom scanning tunneling microscope and explore charge transport through current-voltage measurements. We focus on the resonant tunneling regime of two molecules, one that is primarily an electron conductor and one that conducts primarily holes. We find that in the high bias regime, junctions that do not rupture demonstrate reproducible and pronounced negative differential resistance (NDR)-like features followed by hysteresis, with peak-to-valley ratios exceeding 100 in some cases. Furthermore, we show that both junction rupture and NDR are induced by charging of the molecular orbital dominating transport and find that the charging is reversible at lower bias and with time, with kinetic timescales on the order of hundreds of milliseconds. We argue that these results cannot be explained by existing models of charge transport and likely require theoretical advances describing the transition from coherent to sequential tunneling. Our work also suggests new rules for operating single-molecule devices at high bias to obtain highly non-linear behavior.