Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions

The energy band alignment of ZnO/β-Ga O ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga O heterojunctions....

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Veröffentlicht in:	Nanoscale research letters 2018-12, Vol.13 (1), p.412
Hauptverfasser:	Sun, Shun-Ming, Liu, Wen-Jun, Xiao, Yi-Fan, Huan, Ya-Wei, Liu, Hao, Ding, Shi-Jin, Zhang, David Wei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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