Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions
The energy band alignment of ZnO/β-Ga O ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga O heterojunctions....
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| Veröffentlicht in: | Nanoscale research letters 2018-12, Vol.13 (1), p.412 |
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| creator | Sun, Shun-Ming Liu, Wen-Jun Xiao, Yi-Fan Huan, Ya-Wei Liu, Hao Ding, Shi-Jin Zhang, David Wei |
| description | The energy band alignment of ZnO/β-Ga
O
([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga
O
heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V
+ OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-Ga
O
relevant electronic devices. |
| doi_str_mv | 10.1186/s11671-018-2832-7 |
| format | Article |
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O
([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga
O
heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V
+ OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-Ga
O
relevant electronic devices.</description><identifier>ISSN: 1931-7573</identifier><identifier>DOI: 10.1186/s11671-018-2832-7</identifier><identifier>PMID: 30584649</identifier><language>eng</language><publisher>United States</publisher><ispartof>Nanoscale research letters, 2018-12, Vol.13 (1), p.412</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-4217-8838</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30584649$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Sun, Shun-Ming</creatorcontrib><creatorcontrib>Liu, Wen-Jun</creatorcontrib><creatorcontrib>Xiao, Yi-Fan</creatorcontrib><creatorcontrib>Huan, Ya-Wei</creatorcontrib><creatorcontrib>Liu, Hao</creatorcontrib><creatorcontrib>Ding, Shi-Jin</creatorcontrib><creatorcontrib>Zhang, David Wei</creatorcontrib><title>Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><description>The energy band alignment of ZnO/β-Ga
O
([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga
O
heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V
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O
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O
([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga
O
heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V
+ OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-Ga
O
relevant electronic devices.</abstract><cop>United States</cop><pmid>30584649</pmid><doi>10.1186/s11671-018-2832-7</doi><orcidid>https://orcid.org/0000-0003-4217-8838</orcidid></addata></record> |
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| title | Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions |
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