Energy gap opening by crossing drop cast single-layer graphene nanoribbons
Band gap opening of a single-layer graphene nanoribbon (sGNR) sitting on another sGNR, fabricated by drop casting GNR solution on Au(111) substrate in air, was studied by means of scanning tunneling microscopy and spectroscopy in an ultra-high vacuum at 78 K and 300 K. GNRs with a width of ∼45 nm we...
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Veröffentlicht in: | Nanotechnology 2018-08, Vol.29 (31), p.315705-315705 |
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creator | Yamada, Toyo Kazu Fukuda, Hideto Fujiwara, Taizo Liu, Polin Nakamura, Kohji Kasai, Seiya Vazquez de Parga, Amadeo L Tanaka, Hirofumi |
description | Band gap opening of a single-layer graphene nanoribbon (sGNR) sitting on another sGNR, fabricated by drop casting GNR solution on Au(111) substrate in air, was studied by means of scanning tunneling microscopy and spectroscopy in an ultra-high vacuum at 78 K and 300 K. GNRs with a width of ∼45 nm were prepared by unzipping double-walled carbon nanotubes (diameter ∼15 nm) using the ultrasonic method. In contrast to atomically-flat GNRs fabricated via the bottom-up process, the drop cast sGNRs were buckled on Au(111), i.e., some local points of the sGNR are in contact with the substrate (d ∼ 0.5 nm), but other parts float (d ∼ 1-3 nm), where d denotes the measured distance between the sGNR and the substrate. In spite of the fact that the nanoribbons were buckled, dI/dV maps confirmed that each buckled sGNR had a metallic character (∼3.5 Go) with considerable uniform local density of states, comparable to a flat sGNR. However, when two sGNRs crossed each other, the crossed areas showed a band gap between −50 and +200 meV around the Fermi energy, i.e., the only upper sGNR electronic property changed from metallic to p-type semiconducting, which was not due to the bending, but the electronic interactions between the up and down sGNRs. |
doi_str_mv | 10.1088/1361-6528/aac36b |
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GNRs with a width of ∼45 nm were prepared by unzipping double-walled carbon nanotubes (diameter ∼15 nm) using the ultrasonic method. In contrast to atomically-flat GNRs fabricated via the bottom-up process, the drop cast sGNRs were buckled on Au(111), i.e., some local points of the sGNR are in contact with the substrate (d ∼ 0.5 nm), but other parts float (d ∼ 1-3 nm), where d denotes the measured distance between the sGNR and the substrate. In spite of the fact that the nanoribbons were buckled, dI/dV maps confirmed that each buckled sGNR had a metallic character (∼3.5 Go) with considerable uniform local density of states, comparable to a flat sGNR. However, when two sGNRs crossed each other, the crossed areas showed a band gap between −50 and +200 meV around the Fermi energy, i.e., the only upper sGNR electronic property changed from metallic to p-type semiconducting, which was not due to the bending, but the electronic interactions between the up and down sGNRs.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/aac36b</identifier><identifier>PMID: 29741492</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>cross structure ; drop cast ; energy gap ; graphene nanoribbon ; scanning tunneling microscopy</subject><ispartof>Nanotechnology, 2018-08, Vol.29 (31), p.315705-315705</ispartof><rights>2018 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-9826e978b2d0ec4628dcb3e4cfc4848135fc2185e86eb339c39878f3279014003</citedby><cites>FETCH-LOGICAL-c370t-9826e978b2d0ec4628dcb3e4cfc4848135fc2185e86eb339c39878f3279014003</cites><orcidid>0000-0001-5185-6472</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6528/aac36b/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/29741492$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Yamada, Toyo Kazu</creatorcontrib><creatorcontrib>Fukuda, Hideto</creatorcontrib><creatorcontrib>Fujiwara, Taizo</creatorcontrib><creatorcontrib>Liu, Polin</creatorcontrib><creatorcontrib>Nakamura, Kohji</creatorcontrib><creatorcontrib>Kasai, Seiya</creatorcontrib><creatorcontrib>Vazquez de Parga, Amadeo L</creatorcontrib><creatorcontrib>Tanaka, Hirofumi</creatorcontrib><title>Energy gap opening by crossing drop cast single-layer graphene nanoribbons</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>Band gap opening of a single-layer graphene nanoribbon (sGNR) sitting on another sGNR, fabricated by drop casting GNR solution on Au(111) substrate in air, was studied by means of scanning tunneling microscopy and spectroscopy in an ultra-high vacuum at 78 K and 300 K. GNRs with a width of ∼45 nm were prepared by unzipping double-walled carbon nanotubes (diameter ∼15 nm) using the ultrasonic method. In contrast to atomically-flat GNRs fabricated via the bottom-up process, the drop cast sGNRs were buckled on Au(111), i.e., some local points of the sGNR are in contact with the substrate (d ∼ 0.5 nm), but other parts float (d ∼ 1-3 nm), where d denotes the measured distance between the sGNR and the substrate. In spite of the fact that the nanoribbons were buckled, dI/dV maps confirmed that each buckled sGNR had a metallic character (∼3.5 Go) with considerable uniform local density of states, comparable to a flat sGNR. However, when two sGNRs crossed each other, the crossed areas showed a band gap between −50 and +200 meV around the Fermi energy, i.e., the only upper sGNR electronic property changed from metallic to p-type semiconducting, which was not due to the bending, but the electronic interactions between the up and down sGNRs.</description><subject>cross structure</subject><subject>drop cast</subject><subject>energy gap</subject><subject>graphene nanoribbon</subject><subject>scanning tunneling microscopy</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kDtPwzAQgC0EglLYmVBGkAj1K4kzoqq8VIkFZstxLiFVahu7GfLvSUjpBNJJPlvf3fk-hK4IvidYiAVhKYnThIqFUpqlxRGaHZ6O0QznSRZzLvgZOg9hgzEhgpJTdEbzjBOe0xl6XRnwdR_VykXWgWlMHRV9pL0NYcxLb12kVdhF47WFuFU9-Kj2yn2CgcgoY31TFNaEC3RSqTbA5f6co4_H1fvyOV6_Pb0sH9axZhnexbmgKeSZKGiJQfOUilIXDLiu9PBTQVhSaUpEAiKFgrFcs1xkomI0yzHhGLM5upn6Om-_Ogg7uW2ChrZVBmwXJMUszUSacDqgeEJ_9vFQSeebrfK9JFiOBuWoS4665GRwKLned--KLZSHgl9lA3A7AY11cmM7b4Zl5ehhYCQjQyQZTqQrq4G9-4P9d_Y3iXqHhQ</recordid><startdate>20180803</startdate><enddate>20180803</enddate><creator>Yamada, Toyo Kazu</creator><creator>Fukuda, Hideto</creator><creator>Fujiwara, Taizo</creator><creator>Liu, Polin</creator><creator>Nakamura, Kohji</creator><creator>Kasai, Seiya</creator><creator>Vazquez de Parga, Amadeo L</creator><creator>Tanaka, Hirofumi</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-5185-6472</orcidid></search><sort><creationdate>20180803</creationdate><title>Energy gap opening by crossing drop cast single-layer graphene nanoribbons</title><author>Yamada, Toyo Kazu ; Fukuda, Hideto ; Fujiwara, Taizo ; Liu, Polin ; Nakamura, Kohji ; Kasai, Seiya ; Vazquez de Parga, Amadeo L ; Tanaka, Hirofumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-9826e978b2d0ec4628dcb3e4cfc4848135fc2185e86eb339c39878f3279014003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>cross structure</topic><topic>drop cast</topic><topic>energy gap</topic><topic>graphene nanoribbon</topic><topic>scanning tunneling microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamada, Toyo Kazu</creatorcontrib><creatorcontrib>Fukuda, Hideto</creatorcontrib><creatorcontrib>Fujiwara, Taizo</creatorcontrib><creatorcontrib>Liu, Polin</creatorcontrib><creatorcontrib>Nakamura, Kohji</creatorcontrib><creatorcontrib>Kasai, Seiya</creatorcontrib><creatorcontrib>Vazquez de Parga, Amadeo L</creatorcontrib><creatorcontrib>Tanaka, Hirofumi</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamada, Toyo Kazu</au><au>Fukuda, Hideto</au><au>Fujiwara, Taizo</au><au>Liu, Polin</au><au>Nakamura, Kohji</au><au>Kasai, Seiya</au><au>Vazquez de Parga, Amadeo L</au><au>Tanaka, Hirofumi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Energy gap opening by crossing drop cast single-layer graphene nanoribbons</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2018-08-03</date><risdate>2018</risdate><volume>29</volume><issue>31</issue><spage>315705</spage><epage>315705</epage><pages>315705-315705</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>Band gap opening of a single-layer graphene nanoribbon (sGNR) sitting on another sGNR, fabricated by drop casting GNR solution on Au(111) substrate in air, was studied by means of scanning tunneling microscopy and spectroscopy in an ultra-high vacuum at 78 K and 300 K. GNRs with a width of ∼45 nm were prepared by unzipping double-walled carbon nanotubes (diameter ∼15 nm) using the ultrasonic method. In contrast to atomically-flat GNRs fabricated via the bottom-up process, the drop cast sGNRs were buckled on Au(111), i.e., some local points of the sGNR are in contact with the substrate (d ∼ 0.5 nm), but other parts float (d ∼ 1-3 nm), where d denotes the measured distance between the sGNR and the substrate. In spite of the fact that the nanoribbons were buckled, dI/dV maps confirmed that each buckled sGNR had a metallic character (∼3.5 Go) with considerable uniform local density of states, comparable to a flat sGNR. However, when two sGNRs crossed each other, the crossed areas showed a band gap between −50 and +200 meV around the Fermi energy, i.e., the only upper sGNR electronic property changed from metallic to p-type semiconducting, which was not due to the bending, but the electronic interactions between the up and down sGNRs.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>29741492</pmid><doi>10.1088/1361-6528/aac36b</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-5185-6472</orcidid></addata></record> |
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subjects | cross structure drop cast energy gap graphene nanoribbon scanning tunneling microscopy |
title | Energy gap opening by crossing drop cast single-layer graphene nanoribbons |
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