Ethanol surface chemistry on MBE-grown GaN(0001), GaO x /GaN(0001), and Ga 2 O 3 (2¯01)

Ethanol surface chemistry on MBE-grown GaN(0001), GaO x /GaN(0001), and Ga 2 O 3 (2¯01)

In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formatio...

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Veröffentlicht in:The Journal of chemical physics 2017-09, Vol.147 (12), p.124704
Hauptverfasser: Kollmannsberger, Sebastian L, Walenta, Constantin A, Winnerl, Andrea, Knoller, Fabian, Pereira, Rui N, Tschurl, Martin, Stutzmann, Martin, Heiz, Ueli
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container_issue 12
container_start_page 124704
container_title The Journal of chemical physics
container_volume 147
creator Kollmannsberger, Sebastian L
Walenta, Constantin A
Winnerl, Andrea
Knoller, Fabian
Pereira, Rui N
Tschurl, Martin
Stutzmann, Martin
Heiz, Ueli
description In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga O (2¯01) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.
doi_str_mv 10.1063/1.4994141
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title Ethanol surface chemistry on MBE-grown GaN(0001), GaO x /GaN(0001), and Ga 2 O 3 (2¯01)
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