Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

We demonstrate the controlled growth of Bi(110) and Bi(111) films on an -Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to te...

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Veröffentlicht in:Nanotechnology 2017-04, Vol.28 (15), p.155602-155602
Hauptverfasser: Jankowski, Maciej, Kami ski, Daniel, Vergeer, Kurt, Mirolo, Marta, Carla, Francesco, Rijnders, Guus, Bollmann, Tjeerd R J
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bismuth
sapphire
surface x-ray diffraction
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container_end_page 155602
container_issue 15
container_start_page 155602
container_title Nanotechnology
container_volume 28
creator Jankowski, Maciej
Kami ski, Daniel
Vergeer, Kurt
Mirolo, Marta
Carla, Francesco
Rijnders, Guus
Bollmann, Tjeerd R J
description We demonstrate the controlled growth of Bi(110) and Bi(111) films on an -Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film-vacuum as well as the film-substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.
doi_str_mv 10.1088/1361-6528/aa61dd
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subjects bismuth
sapphire
surface x-ray diffraction
title Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate
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