Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films
The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2-μm-thic...
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| creator | Yang, Jeong-Suong Kang, YunSung Kang, Inyoung Lim, SeungMo Shin, Seung-Joo Lee, JungWon Hur, Kang Heon |
| description | The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2-μm-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging. |
| doi_str_mv | 10.1109/TUFFC.2017.2647971 |
| format | Article |
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Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2-μm-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.</description><identifier>ISSN: 0885-3010</identifier><identifier>EISSN: 1525-8955</identifier><identifier>DOI: 10.1109/TUFFC.2017.2647971</identifier><identifier>PMID: 28060706</identifier><identifier>CODEN: ITUCER</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>Columnar structure ; Degradation ; Electrode polarization ; Electrodes ; Grain structure ; High temperature ; interferometer ; lead zirconate titanate (PZT) ; Lead zirconate titanates ; Magnetron sputtering ; Measurement by laser beam ; microelectromechanical system (MEMS) ; Microelectromechanical systems ; Niobium ; Oxygen ; oxygen vacancy ; Perovskites ; Photoluminescence ; photoluminescence (PL) ; Piezoelectricity ; Radio frequency ; RF sputter ; sensor ; Sputtering ; Temperature measurement ; Thermal degradation ; Thermal resistance ; Thick films ; Thin films ; Vacancies</subject><ispartof>IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2017-03, Vol.64 (3), p.617-622</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-a672d59b814224ea6a83d3217d284a6b7d5d48a469e20d76f7c84255ac12db193</citedby><cites>FETCH-LOGICAL-c351t-a672d59b814224ea6a83d3217d284a6b7d5d48a469e20d76f7c84255ac12db193</cites><orcidid>0000-0002-7168-4855</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7805292$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7805292$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28060706$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, Jeong-Suong</creatorcontrib><creatorcontrib>Kang, YunSung</creatorcontrib><creatorcontrib>Kang, Inyoung</creatorcontrib><creatorcontrib>Lim, SeungMo</creatorcontrib><creatorcontrib>Shin, Seung-Joo</creatorcontrib><creatorcontrib>Lee, JungWon</creatorcontrib><creatorcontrib>Hur, Kang Heon</creatorcontrib><title>Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films</title><title>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</title><addtitle>T-UFFC</addtitle><addtitle>IEEE Trans Ultrason Ferroelectr Freq Control</addtitle><description>The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2-μm-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.</description><subject>Columnar structure</subject><subject>Degradation</subject><subject>Electrode polarization</subject><subject>Electrodes</subject><subject>Grain structure</subject><subject>High temperature</subject><subject>interferometer</subject><subject>lead zirconate titanate (PZT)</subject><subject>Lead zirconate titanates</subject><subject>Magnetron sputtering</subject><subject>Measurement by laser beam</subject><subject>microelectromechanical system (MEMS)</subject><subject>Microelectromechanical systems</subject><subject>Niobium</subject><subject>Oxygen</subject><subject>oxygen vacancy</subject><subject>Perovskites</subject><subject>Photoluminescence</subject><subject>photoluminescence (PL)</subject><subject>Piezoelectricity</subject><subject>Radio frequency</subject><subject>RF sputter</subject><subject>sensor</subject><subject>Sputtering</subject><subject>Temperature measurement</subject><subject>Thermal degradation</subject><subject>Thermal resistance</subject><subject>Thick films</subject><subject>Thin films</subject><subject>Vacancies</subject><issn>0885-3010</issn><issn>1525-8955</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLw0AUhQdRbK3-AQUJuHGTOnMzz6Wk1gqlCrYbN2GSmdpIkqkzrdB_b_qwC1d3cb5zuHwIXRPcJwSrh-lsOEz7gInoA6dCCXKCuoQBi6Vi7BR1sZQsTjDBHXQRwhfGhFIF56gDEnMsMO-i99TVS-3L4JrIzaPVwkbThfW1rqKB_fTa6FW5j0ZW_5TVJprk8cAtrYl0Y6KJ26FvH9O2VjbRsKzqcInO5roK9upwe2g2fJqmo3j8-vySPo7jImFkFWsuwDCVS0IBqNVcy8QkQIQBSTXPhWGGSk25soCN4HNRSAqM6YKAyYlKeuh-v7v07nttwyqry1DYqtKNdeuQEck4k1IBtOjdP_TLrX3TftdSgnGCeSJaCvZU4V0I3s6zpS9r7TcZwdlWebZTnm2VZwflben2ML3Oa2uOlT_HLXCzB0pr7TEWEjNQkPwCFuuCYg</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Yang, Jeong-Suong</creator><creator>Kang, YunSung</creator><creator>Kang, Inyoung</creator><creator>Lim, SeungMo</creator><creator>Shin, Seung-Joo</creator><creator>Lee, JungWon</creator><creator>Hur, Kang Heon</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-7168-4855</orcidid></search><sort><creationdate>20170301</creationdate><title>Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films</title><author>Yang, Jeong-Suong ; Kang, YunSung ; Kang, Inyoung ; Lim, SeungMo ; Shin, Seung-Joo ; Lee, JungWon ; Hur, Kang Heon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-a672d59b814224ea6a83d3217d284a6b7d5d48a469e20d76f7c84255ac12db193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Columnar structure</topic><topic>Degradation</topic><topic>Electrode polarization</topic><topic>Electrodes</topic><topic>Grain structure</topic><topic>High temperature</topic><topic>interferometer</topic><topic>lead zirconate titanate (PZT)</topic><topic>Lead zirconate titanates</topic><topic>Magnetron sputtering</topic><topic>Measurement by laser beam</topic><topic>microelectromechanical system (MEMS)</topic><topic>Microelectromechanical systems</topic><topic>Niobium</topic><topic>Oxygen</topic><topic>oxygen vacancy</topic><topic>Perovskites</topic><topic>Photoluminescence</topic><topic>photoluminescence (PL)</topic><topic>Piezoelectricity</topic><topic>Radio frequency</topic><topic>RF sputter</topic><topic>sensor</topic><topic>Sputtering</topic><topic>Temperature measurement</topic><topic>Thermal degradation</topic><topic>Thermal resistance</topic><topic>Thick films</topic><topic>Thin films</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Jeong-Suong</creatorcontrib><creatorcontrib>Kang, YunSung</creatorcontrib><creatorcontrib>Kang, Inyoung</creatorcontrib><creatorcontrib>Lim, SeungMo</creatorcontrib><creatorcontrib>Shin, Seung-Joo</creatorcontrib><creatorcontrib>Lee, JungWon</creatorcontrib><creatorcontrib>Hur, Kang Heon</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, Jeong-Suong</au><au>Kang, YunSung</au><au>Kang, Inyoung</au><au>Lim, SeungMo</au><au>Shin, Seung-Joo</au><au>Lee, JungWon</au><au>Hur, Kang Heon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films</atitle><jtitle>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</jtitle><stitle>T-UFFC</stitle><addtitle>IEEE Trans Ultrason Ferroelectr Freq Control</addtitle><date>2017-03-01</date><risdate>2017</risdate><volume>64</volume><issue>3</issue><spage>617</spage><epage>622</epage><pages>617-622</pages><issn>0885-3010</issn><eissn>1525-8955</eissn><coden>ITUCER</coden><abstract>The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2-μm-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.</abstract><cop>United States</cop><pub>IEEE</pub><pmid>28060706</pmid><doi>10.1109/TUFFC.2017.2647971</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-7168-4855</orcidid></addata></record> |
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| ispartof | IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2017-03, Vol.64 (3), p.617-622 |
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| subjects | Columnar structure Degradation Electrode polarization Electrodes Grain structure High temperature interferometer lead zirconate titanate (PZT) Lead zirconate titanates Magnetron sputtering Measurement by laser beam microelectromechanical system (MEMS) Microelectromechanical systems Niobium Oxygen oxygen vacancy Perovskites Photoluminescence photoluminescence (PL) Piezoelectricity Radio frequency RF sputter sensor Sputtering Temperature measurement Thermal degradation Thermal resistance Thick films Thin films Vacancies |
| title | Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films |
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