Trap-mediated electronic transport properties of gate-tunable pentacene/MoS 2 p-n heterojunction diodes

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the hetero...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Scientific reports 2016-11, Vol.6, p.36775
Hauptverfasser:	Kim, Jae-Keun, Cho, Kyungjune, Kim, Tae-Young, Pak, Jinsu, Jang, Jingon, Song, Younggul, Kim, Youngrok, Choi, Barbara Yuri, Chung, Seungjun, Hong, Woong-Ki, Lee, Takhee
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!