Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination

We present a phenomenon concerning electromagnetic enhancement at the heterojunction region of axially heterostructured Si/SiGe nanowires when the nanowire is illuminated by a focused laser beam. The local electric field is sensed by micro Raman spectroscopy, which allows the enhancement of the Rama...

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Veröffentlicht in:	Nanotechnology 2016-11, Vol.27 (45), p.455709-455709
Hauptverfasser:	Pura, Jose Luis, Anaya, Julián, Souto, Jorge, Prieto, Ángel Carmelo, Rodríguez, Andrés, Rodríguez, Tomás, Jiménez, Juan
Format:	Artikel
Sprache:	eng
Schlagworte:	electromagnetic enhancement nanowires photogenerated carriers Si/SiGe heterojunction
Online-Zugang:	Volltext
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