Surface and near surface defects in δ-doped Si(1 1 1)

The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this sy...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Condensed matter 2015-04, Vol.27 (12), p.125001-125001
Hauptverfasser: Andrade, D P, Miwa, R H, Drevniok, B, Drage, P, McLean, A B
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 125001
container_issue 12
container_start_page 125001
container_title Journal of physics. Condensed matter
container_volume 27
creator Andrade, D P
Miwa, R H
Drevniok, B
Drage, P
McLean, A B
description The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.
doi_str_mv 10.1088/0953-8984/27/12/125001
format Article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmed_primary_25679226</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1662635391</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</originalsourceid><addsrcrecordid>eNqFkMtKw0AUhgdRbK2-QsmyLmLnnom4keINCi6q4G6YzgWmpEmcSRbu3Po-PocP4ZOYmtqFm3LO4cDh__8DHwBjBC8QFGIKc0ZSkQs6xdkU4a4ZhOgADBHhKOVUvByC4U40ACcxriCEVBB6DAaY8SzHmA_B5aINTmmbqNIkpVUhiduDsc7qJia-TL4-U1PV1iQLP0Hf7x-_c34Kjpwqoj3b7hF4vr15mt2n88e7h9n1PNWE0SZ1SwhNRgiFhhktuLBQdcWdNRxliEEkHM0hQ2aJmco1VATxnGSMaoUtc2QEJn1uHarX1sZGrn3UtihUaas2SsQ55oSRHHVS3kt1qGIM1sk6-LUKbxJBueEmN0jkBonEmURY9tw643j7o12urdnZ_kB1gqt_ydo3qvFV2QTli_35uLf7qparqg1lR2yf6QcSfolU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1662635391</pqid></control><display><type>article</type><title>Surface and near surface defects in δ-doped Si(1 1 1)</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Andrade, D P ; Miwa, R H ; Drevniok, B ; Drage, P ; McLean, A B</creator><creatorcontrib>Andrade, D P ; Miwa, R H ; Drevniok, B ; Drage, P ; McLean, A B</creatorcontrib><description>The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/27/12/125001</identifier><identifier>PMID: 25679226</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>delta-doping ; dopants ; electronic structure ; silicon ; STM ; surface ; surface states</subject><ispartof>Journal of physics. Condensed matter, 2015-04, Vol.27 (12), p.125001-125001</ispartof><rights>2015 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</citedby><cites>FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0953-8984/27/12/125001/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,778,782,27911,27912,53833,53880</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25679226$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Andrade, D P</creatorcontrib><creatorcontrib>Miwa, R H</creatorcontrib><creatorcontrib>Drevniok, B</creatorcontrib><creatorcontrib>Drage, P</creatorcontrib><creatorcontrib>McLean, A B</creatorcontrib><title>Surface and near surface defects in δ-doped Si(1 1 1)</title><title>Journal of physics. Condensed matter</title><addtitle>JPhysCM</addtitle><addtitle>J. Phys.: Condens. Matter</addtitle><description>The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.</description><subject>delta-doping</subject><subject>dopants</subject><subject>electronic structure</subject><subject>silicon</subject><subject>STM</subject><subject>surface</subject><subject>surface states</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKw0AUhgdRbK2-QsmyLmLnnom4keINCi6q4G6YzgWmpEmcSRbu3Po-PocP4ZOYmtqFm3LO4cDh__8DHwBjBC8QFGIKc0ZSkQs6xdkU4a4ZhOgADBHhKOVUvByC4U40ACcxriCEVBB6DAaY8SzHmA_B5aINTmmbqNIkpVUhiduDsc7qJia-TL4-U1PV1iQLP0Hf7x-_c34Kjpwqoj3b7hF4vr15mt2n88e7h9n1PNWE0SZ1SwhNRgiFhhktuLBQdcWdNRxliEEkHM0hQ2aJmco1VATxnGSMaoUtc2QEJn1uHarX1sZGrn3UtihUaas2SsQ55oSRHHVS3kt1qGIM1sk6-LUKbxJBueEmN0jkBonEmURY9tw643j7o12urdnZ_kB1gqt_ydo3qvFV2QTli_35uLf7qparqg1lR2yf6QcSfolU</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Andrade, D P</creator><creator>Miwa, R H</creator><creator>Drevniok, B</creator><creator>Drage, P</creator><creator>McLean, A B</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20150401</creationdate><title>Surface and near surface defects in δ-doped Si(1 1 1)</title><author>Andrade, D P ; Miwa, R H ; Drevniok, B ; Drage, P ; McLean, A B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>delta-doping</topic><topic>dopants</topic><topic>electronic structure</topic><topic>silicon</topic><topic>STM</topic><topic>surface</topic><topic>surface states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andrade, D P</creatorcontrib><creatorcontrib>Miwa, R H</creatorcontrib><creatorcontrib>Drevniok, B</creatorcontrib><creatorcontrib>Drage, P</creatorcontrib><creatorcontrib>McLean, A B</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andrade, D P</au><au>Miwa, R H</au><au>Drevniok, B</au><au>Drage, P</au><au>McLean, A B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface and near surface defects in δ-doped Si(1 1 1)</atitle><jtitle>Journal of physics. Condensed matter</jtitle><stitle>JPhysCM</stitle><addtitle>J. Phys.: Condens. Matter</addtitle><date>2015-04-01</date><risdate>2015</risdate><volume>27</volume><issue>12</issue><spage>125001</spage><epage>125001</epage><pages>125001-125001</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><abstract>The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>25679226</pmid><doi>10.1088/0953-8984/27/12/125001</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0953-8984
ispartof Journal of physics. Condensed matter, 2015-04, Vol.27 (12), p.125001-125001
issn 0953-8984
1361-648X
language eng
recordid cdi_pubmed_primary_25679226
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects delta-doping
dopants
electronic structure
silicon
STM
surface
surface states
title Surface and near surface defects in δ-doped Si(1 1 1)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T05%3A48%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20and%20near%20surface%20defects%20in%20%CE%B4-doped%20Si(1%E2%80%891%E2%80%891)&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=Andrade,%20D%20P&rft.date=2015-04-01&rft.volume=27&rft.issue=12&rft.spage=125001&rft.epage=125001&rft.pages=125001-125001&rft.issn=0953-8984&rft.eissn=1361-648X&rft.coden=JCOMEL&rft_id=info:doi/10.1088/0953-8984/27/12/125001&rft_dat=%3Cproquest_pubme%3E1662635391%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1662635391&rft_id=info:pmid/25679226&rfr_iscdi=true