Surface and near surface defects in δ-doped Si(1 1 1)
The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this sy...
Gespeichert in:
Veröffentlicht in: | Journal of physics. Condensed matter 2015-04, Vol.27 (12), p.125001-125001 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 125001 |
---|---|
container_issue | 12 |
container_start_page | 125001 |
container_title | Journal of physics. Condensed matter |
container_volume | 27 |
creator | Andrade, D P Miwa, R H Drevniok, B Drage, P McLean, A B |
description | The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity. |
doi_str_mv | 10.1088/0953-8984/27/12/125001 |
format | Article |
fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmed_primary_25679226</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1662635391</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</originalsourceid><addsrcrecordid>eNqFkMtKw0AUhgdRbK2-QsmyLmLnnom4keINCi6q4G6YzgWmpEmcSRbu3Po-PocP4ZOYmtqFm3LO4cDh__8DHwBjBC8QFGIKc0ZSkQs6xdkU4a4ZhOgADBHhKOVUvByC4U40ACcxriCEVBB6DAaY8SzHmA_B5aINTmmbqNIkpVUhiduDsc7qJia-TL4-U1PV1iQLP0Hf7x-_c34Kjpwqoj3b7hF4vr15mt2n88e7h9n1PNWE0SZ1SwhNRgiFhhktuLBQdcWdNRxliEEkHM0hQ2aJmco1VATxnGSMaoUtc2QEJn1uHarX1sZGrn3UtihUaas2SsQ55oSRHHVS3kt1qGIM1sk6-LUKbxJBueEmN0jkBonEmURY9tw643j7o12urdnZ_kB1gqt_ydo3qvFV2QTli_35uLf7qparqg1lR2yf6QcSfolU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1662635391</pqid></control><display><type>article</type><title>Surface and near surface defects in δ-doped Si(1 1 1)</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Andrade, D P ; Miwa, R H ; Drevniok, B ; Drage, P ; McLean, A B</creator><creatorcontrib>Andrade, D P ; Miwa, R H ; Drevniok, B ; Drage, P ; McLean, A B</creatorcontrib><description>The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/27/12/125001</identifier><identifier>PMID: 25679226</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>delta-doping ; dopants ; electronic structure ; silicon ; STM ; surface ; surface states</subject><ispartof>Journal of physics. Condensed matter, 2015-04, Vol.27 (12), p.125001-125001</ispartof><rights>2015 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</citedby><cites>FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0953-8984/27/12/125001/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,778,782,27911,27912,53833,53880</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25679226$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Andrade, D P</creatorcontrib><creatorcontrib>Miwa, R H</creatorcontrib><creatorcontrib>Drevniok, B</creatorcontrib><creatorcontrib>Drage, P</creatorcontrib><creatorcontrib>McLean, A B</creatorcontrib><title>Surface and near surface defects in δ-doped Si(1 1 1)</title><title>Journal of physics. Condensed matter</title><addtitle>JPhysCM</addtitle><addtitle>J. Phys.: Condens. Matter</addtitle><description>The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.</description><subject>delta-doping</subject><subject>dopants</subject><subject>electronic structure</subject><subject>silicon</subject><subject>STM</subject><subject>surface</subject><subject>surface states</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKw0AUhgdRbK2-QsmyLmLnnom4keINCi6q4G6YzgWmpEmcSRbu3Po-PocP4ZOYmtqFm3LO4cDh__8DHwBjBC8QFGIKc0ZSkQs6xdkU4a4ZhOgADBHhKOVUvByC4U40ACcxriCEVBB6DAaY8SzHmA_B5aINTmmbqNIkpVUhiduDsc7qJia-TL4-U1PV1iQLP0Hf7x-_c34Kjpwqoj3b7hF4vr15mt2n88e7h9n1PNWE0SZ1SwhNRgiFhhktuLBQdcWdNRxliEEkHM0hQ2aJmco1VATxnGSMaoUtc2QEJn1uHarX1sZGrn3UtihUaas2SsQ55oSRHHVS3kt1qGIM1sk6-LUKbxJBueEmN0jkBonEmURY9tw643j7o12urdnZ_kB1gqt_ydo3qvFV2QTli_35uLf7qparqg1lR2yf6QcSfolU</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Andrade, D P</creator><creator>Miwa, R H</creator><creator>Drevniok, B</creator><creator>Drage, P</creator><creator>McLean, A B</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20150401</creationdate><title>Surface and near surface defects in δ-doped Si(1 1 1)</title><author>Andrade, D P ; Miwa, R H ; Drevniok, B ; Drage, P ; McLean, A B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-fb00d73340d5dc868e0a0a06fed61715018f49051db25a9c0a31693754ca2e5f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>delta-doping</topic><topic>dopants</topic><topic>electronic structure</topic><topic>silicon</topic><topic>STM</topic><topic>surface</topic><topic>surface states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andrade, D P</creatorcontrib><creatorcontrib>Miwa, R H</creatorcontrib><creatorcontrib>Drevniok, B</creatorcontrib><creatorcontrib>Drage, P</creatorcontrib><creatorcontrib>McLean, A B</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andrade, D P</au><au>Miwa, R H</au><au>Drevniok, B</au><au>Drage, P</au><au>McLean, A B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface and near surface defects in δ-doped Si(1 1 1)</atitle><jtitle>Journal of physics. Condensed matter</jtitle><stitle>JPhysCM</stitle><addtitle>J. Phys.: Condens. Matter</addtitle><date>2015-04-01</date><risdate>2015</risdate><volume>27</volume><issue>12</issue><spage>125001</spage><epage>125001</epage><pages>125001-125001</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><abstract>The B/Si(1 1 1)- R30° surface reconstruction has recently been used as a platform for supramolecular assembly. However, our understanding of the native defects in this delta-doped system and their corresponding scanning tunnelling microscopy (STM) signatures is incomplete. So we have studied this system using ab initio total energy calculations and scanning tunneling microscopy. We find that although perturbations to the equilibrium geometry of the surface are in general weak, the perturbations to the electronic structure can be quite strong due to the presence of dangling bonds composed of Si-3pz orbitals. Additionally, we propose a possible structure for a previously unidentified defect that appears in positive bias constant-current STM images as an equilateral triangular arrangement of Si adatoms with attenuated intensity.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>25679226</pmid><doi>10.1088/0953-8984/27/12/125001</doi><tpages>8</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0953-8984 |
ispartof | Journal of physics. Condensed matter, 2015-04, Vol.27 (12), p.125001-125001 |
issn | 0953-8984 1361-648X |
language | eng |
recordid | cdi_pubmed_primary_25679226 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | delta-doping dopants electronic structure silicon STM surface surface states |
title | Surface and near surface defects in δ-doped Si(1 1 1) |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T05%3A48%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20and%20near%20surface%20defects%20in%20%CE%B4-doped%20Si(1%E2%80%891%E2%80%891)&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=Andrade,%20D%20P&rft.date=2015-04-01&rft.volume=27&rft.issue=12&rft.spage=125001&rft.epage=125001&rft.pages=125001-125001&rft.issn=0953-8984&rft.eissn=1361-648X&rft.coden=JCOMEL&rft_id=info:doi/10.1088/0953-8984/27/12/125001&rft_dat=%3Cproquest_pubme%3E1662635391%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1662635391&rft_id=info:pmid/25679226&rfr_iscdi=true |