Forming and switching mechanisms of a cation-migration-based oxide resistive memory

We report detailed current-voltage and current-time measurements to reveal the forming and switching behaviors of Cu/Ta(2)O(5)/Pt nonvolatile resistive memory devices. The devices can be initially SET (from the OFF state to the ON state) when a low positive bias voltage is applied to the Cu electrod...

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Veröffentlicht in:	Nanotechnology 2010-10, Vol.21 (42), p.425205-425205
Hauptverfasser:	Tsuruoka, T, Terabe, K, Hasegawa, T, Aono, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Cations Copper Devices Electrodes Forming Metal fibers Switching Tantalum oxides
Online-Zugang:	Volltext
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